Ka-Band Monolithic Low-Noise Amplifier Using Direct Ion-Implanted GaAs MESFET’s

D. R. Scherrer, Milton Feng, P. J. Apostolakis, J. R. Middleton

Research output: Contribution to journalArticle

Abstract

Ka-band monolithic low-noise amplifiers using low cost direct ion-implanted GaAs MESFET’s with 0.25 µm “T’-gates have been developed for use at 27 to 34 GHz. The five stage MMIC amplifier is designed based on 50% Idss self-biasing using a single power supply. These amplifiers achieved 2-3 dB noise figure with 30 dB associated gain at 33 GHz. These results, using low cost ion implantation techniques, rival the best GaAs p-HEMT MMIC results to date.

Original languageEnglish (US)
Pages (from-to)156-158
Number of pages3
JournalIEEE Microwave and Guided Wave Letters
Volume5
Issue number5
DOIs
StatePublished - May 1995

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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