Ka-Band Monolithic Low-Noise Amplifier Using Direct Ion-Implanted GaAs MESFET’s

D. R. Scherrer; Milton Feng; P. J. Apostolakis; J. R. Middleton

doi:10.1109/75.374083

Ka-Band Monolithic Low-Noise Amplifier Using Direct Ion-Implanted GaAs MESFET’s

D. R. Scherrer, Milton Feng, P. J. Apostolakis, J. R. Middleton

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Ka-band monolithic low-noise amplifiers using low cost direct ion-implanted GaAs MESFET’s with 0.25 µm “T’-gates have been developed for use at 27 to 34 GHz. The five stage MMIC amplifier is designed based on 50% Idss self-biasing using a single power supply. These amplifiers achieved 2-3 dB noise figure with 30 dB associated gain at 33 GHz. These results, using low cost ion implantation techniques, rival the best GaAs p-HEMT MMIC results to date.

Original language	English (US)
Pages (from-to)	156-158
Number of pages	3
Journal	IEEE Microwave and Guided Wave Letters
Volume	5
Issue number	5
DOIs	https://doi.org/10.1109/75.374083
State	Published - May 1995

ASJC Scopus subject areas

General Engineering
General Physics and Astronomy

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10.1109/75.374083

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title = "Ka-Band Monolithic Low-Noise Amplifier Using Direct Ion-Implanted GaAs MESFET{\textquoteright}s",

abstract = "Ka-band monolithic low-noise amplifiers using low cost direct ion-implanted GaAs MESFET{\textquoteright}s with 0.25 µm “T{\textquoteright}-gates have been developed for use at 27 to 34 GHz. The five stage MMIC amplifier is designed based on 50% Idss self-biasing using a single power supply. These amplifiers achieved 2-3 dB noise figure with 30 dB associated gain at 33 GHz. These results, using low cost ion implantation techniques, rival the best GaAs p-HEMT MMIC results to date.",

author = "Scherrer, {D. R.} and Milton Feng and Apostolakis, {P. J.} and Middleton, {J. R.}",

note = "Funding Information: Manuscript received January 24, 1994; revised September 8, 1994. This work was supported by the Air Force MIMIC Program and ARPA MIMIC Program MIMIC Phase 3 program on ARPA-WPAFB F33615-92-C-1039, and NSF-EPSD.",

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AU - Apostolakis, P. J.

AU - Middleton, J. R.

N1 - Funding Information: Manuscript received January 24, 1994; revised September 8, 1994. This work was supported by the Air Force MIMIC Program and ARPA MIMIC Program MIMIC Phase 3 program on ARPA-WPAFB F33615-92-C-1039, and NSF-EPSD.

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Ka-Band Monolithic Low-Noise Amplifier Using Direct Ion-Implanted GaAs MESFET’s

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