Abstract
Monolithic, two-stage amplifiers using 0·5 × 80 μm2 gate GaAs/AIGaAs heterojunction FETs have been developed for Ka-band operation. These monolithic two-stage amplifiers were fabricated using ion implantation for the active layer and optical lithography for the 0·5 μm gate length. MMIC two-stage amplifiers achieved average gains of 12·6 ± 1·4dB at 30 GHz and 8·8 ± 2·0dB at 40 GHz, respectively, for all 39 sites across a 3 inch diameter wafer. These are the first reported results the MMIC two-stage amplifiers using 0·5 μm gate length ion-implanted GaAs/AIGaAs heterojunction FETs achieved over 10 dB gain at Ka band.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 2121-2122 |
| Number of pages | 2 |
| Journal | Electronics Letters |
| Volume | 27 |
| Issue number | 23 |
| DOIs | |
| State | Published - Oct 24 1991 |
Keywords
- Amplifiers
- Integrated circuits
- Microwave circuits
- Microwave devices and components
ASJC Scopus subject areas
- Electrical and Electronic Engineering