JVD silicon nitride as tunnel dielectric in p-channel flash memory

Min She; Tsu Jae King; Chenming Hu; Wenjuan Zhu; Zhijiong Luo; Jin Ping Han; Tso Ping Ma

doi:10.1109/55.981316

JVD silicon nitride as tunnel dielectric in p-channel flash memory

Min She, Tsu Jae King, Chenming Hu, Wenjuan Zhu, Zhijiong Luo, Jin Ping Han, Tso Ping Ma

Research output: Contribution to journal › Article › peer-review

Abstract

High-quality jet vapor deposition nitride is investigated as a tunnel dielectric for flash memory device application. Compared to control devices with SiO₂ tunnel dielectric, faster programming speed as well as better retention time are achieved with low programming voltage. The p-channel devices can be programmed by hot electrons and erased by hot holes, or vice versa. Multilevel programming capability is shown.

Original language	English (US)
Pages (from-to)	91-93
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	23
Issue number	2
DOIs	https://doi.org/10.1109/55.981316
State	Published - Feb 2002
Externally published	Yes

Keywords

Charge injection
Semiconductor memories
Silicon nitride

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Online availability

10.1109/55.981316

Library availability

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abstract = "High-quality jet vapor deposition nitride is investigated as a tunnel dielectric for flash memory device application. Compared to control devices with SiO2 tunnel dielectric, faster programming speed as well as better retention time are achieved with low programming voltage. The p-channel devices can be programmed by hot electrons and erased by hot holes, or vice versa. Multilevel programming capability is shown.",

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AU - Han, Jin Ping

AU - Ma, Tso Ping

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AB - High-quality jet vapor deposition nitride is investigated as a tunnel dielectric for flash memory device application. Compared to control devices with SiO2 tunnel dielectric, faster programming speed as well as better retention time are achieved with low programming voltage. The p-channel devices can be programmed by hot electrons and erased by hot holes, or vice versa. Multilevel programming capability is shown.

KW - Charge injection

KW - Semiconductor memories

KW - Silicon nitride

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JVD silicon nitride as tunnel dielectric in p-channel flash memory

Abstract

Keywords

ASJC Scopus subject areas

Online availability

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