Junction electroluminiscence of Cu(In,Ga)Se2 devices

J. L. Hernandez, Angus Rockett

Research output: Contribution to journalConference article

Abstract

The electroluminescence of Cu(In,Ga)Se2 polycrystalline solar cells produced at different laboratories by different processes and with different Ga contents has been measured as a function of temperature and wavelength. The total emission intensity was found to have a power-law variation with the diode current with an exponent between 1.2 and 1.9. The external quantum efficiency of the electroluminescence was estimated to be between 10-6 and 10-7 at room temperature and modest currents. This increases by up to two orders of magnitude at 70 K. A commercial light emitting diode (LED) was found to have an external quantum efficiency between 10-3 and 10-4 at roughly 103 higher current densities. Luminescence spectra were Gaussian. The peak luminescence wavelength of the solar cells increases upon cooling while the maximum wavelength for photocurrent generation decreases. The results suggest at least two independent processes for carrier generation and radiative recombination.

Original languageEnglish (US)
Pages (from-to)973-976
Number of pages4
JournalConference Record of the IEEE Photovoltaic Specialists Conference
StatePublished - Dec 1 1996
EventProceedings of the 1996 25th IEEE Photovoltaic Specialists Conference - Washington, DC, USA
Duration: May 13 1996May 17 1996

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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