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Joule heating and phonon transport in silicon MOSFETs
Zlatan Aksamija,
Umberto Ravaioli
Beckman Institute for Advanced Science and Technology
Coordinated Science Lab
Electrical and Computer Engineering
Micro and Nanotechnology Lab
Grainger College of Engineering
Research output
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peer-review
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Mathematics
Joule Heating
96%
Phonon
86%
Density of States
32%
Device Simulation
19%
Heat Transport
17%
Energy
15%
Heat Flow
14%
Anisotropy
13%
Inclusion
9%
Form
4%
Model
3%
Physics & Astronomy
Joule heating
68%
field effect transistors
46%
phonons
40%
silicon
31%
heat
23%
heat transmission
12%
thermal energy
12%
electrons
9%
inclusions
9%
anisotropy
7%
simulation
4%
temperature
3%
energy
3%
Engineering & Materials Science
Phonons
92%
Silicon
46%
Electrons
23%
Hot Temperature
16%
MOSFET devices
13%
Anisotropy
12%
Thermal energy
11%
Heat transfer
7%
Temperature
4%
Chemical Compounds
Phonon
66%
Heat
32%
Electron Particle
15%
Heat Transfer
15%
Density of State
15%
Anisotropy
13%
Simulation
9%