J resistance behavior in functionally graded materials using cohesive zone and modified boundary layer models

Do Jun Shim, Glaucio H. Paulino, Robert H. Dodds

Research output: Contribution to journalArticlepeer-review

Abstract

This paper describes elastic-plastic crack growth resistance simulation in a ceramic/metal functionally graded material (FGM) under mode I loading conditions using cohesive zone and modified boundary layer (MBL) models. For this purpose, we first explore the applicability of two existing, phenomenological cohesive zone models for FGMs. Based on these investigations, we propose a new cohesive zone model. Then, we perform crack growth simulations for TiB/Ti FGM SE(B) and SE(T) specimens using the three cohesive zone models mentioned above. The crack growth resistance of the FGM is characterized by the J-integral. These results show that the two existing cohesive zone models overestimate the actual J value, whereas the model proposed in the present study closely captures the actual fracture and crack growth behaviors of the FGM. Finally, the cohesive zone models are employed in conjunction with the MBL model. The two existing cohesive zone models fail to produce the desired K-T stress field for the MBL model. On the other hand, the proposed cohesive zone model yields the desired K-T stress field for the MBL model, and thus yields JR curves that match the ones obtained from the SE(B) and SE(T) specimens. These results verify the application of the MBL model to simulate crack growth resistance in FGMs.

Original languageEnglish (US)
Pages (from-to)91-117
Number of pages27
JournalInternational Journal of Fracture
Volume139
Issue number1
DOIs
StatePublished - May 2006

Keywords

  • 3-D finite element analysis
  • Cohesive zone model
  • Crack growth resistance curve
  • Elastic-plastic crack growth
  • Functionally graded material (FGM)
  • J-integral
  • Modified boundary layer model

ASJC Scopus subject areas

  • Computational Mechanics
  • Modeling and Simulation
  • Mechanics of Materials

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