iTEM: A chip-level electromigration reliability diagnosis tool using electrothermal timing simulation

Chin Chi Teng, Yi Kan Cheng, Elyse Rosenbaum, Sung Mo Kang

Research output: Contribution to journalArticle

Abstract

In this paper, we present a new electromigration reliability diagnosis tool (iTEM) for CMOS VLSI circuits. Unlike previous electromigration reliability tools, iTEM can estimate the interconnect temperature rise due to joule heating and heat conduction from the substrate using a newly developed lumped thermal model. Including the temperature effect, iTEM provides more accurate electromigration reliability diagnosis. Moreover, it is very fast and can analyze circuit layouts containing tens of thousands of transistors on a desktop workstation.

Original languageEnglish (US)
Pages (from-to)172-179
Number of pages8
JournalAnnual Proceedings - Reliability Physics (Symposium)
StatePublished - 1996

Fingerprint

Electromigration
Integrated circuit layout
Joule heating
VLSI circuits
Heat conduction
Thermal effects
Transistors
Substrates
Temperature

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

Cite this

iTEM : A chip-level electromigration reliability diagnosis tool using electrothermal timing simulation. / Teng, Chin Chi; Cheng, Yi Kan; Rosenbaum, Elyse; Kang, Sung Mo.

In: Annual Proceedings - Reliability Physics (Symposium), 1996, p. 172-179.

Research output: Contribution to journalArticle

@article{f75e47fbcf714594984b8ae6ffc56e53,
title = "iTEM: A chip-level electromigration reliability diagnosis tool using electrothermal timing simulation",
abstract = "In this paper, we present a new electromigration reliability diagnosis tool (iTEM) for CMOS VLSI circuits. Unlike previous electromigration reliability tools, iTEM can estimate the interconnect temperature rise due to joule heating and heat conduction from the substrate using a newly developed lumped thermal model. Including the temperature effect, iTEM provides more accurate electromigration reliability diagnosis. Moreover, it is very fast and can analyze circuit layouts containing tens of thousands of transistors on a desktop workstation.",
author = "Teng, {Chin Chi} and Cheng, {Yi Kan} and Elyse Rosenbaum and Kang, {Sung Mo}",
year = "1996",
language = "English (US)",
pages = "172--179",
journal = "Annual Proceedings - Reliability Physics (Symposium)",
issn = "0099-9512",

}

TY - JOUR

T1 - iTEM

T2 - A chip-level electromigration reliability diagnosis tool using electrothermal timing simulation

AU - Teng, Chin Chi

AU - Cheng, Yi Kan

AU - Rosenbaum, Elyse

AU - Kang, Sung Mo

PY - 1996

Y1 - 1996

N2 - In this paper, we present a new electromigration reliability diagnosis tool (iTEM) for CMOS VLSI circuits. Unlike previous electromigration reliability tools, iTEM can estimate the interconnect temperature rise due to joule heating and heat conduction from the substrate using a newly developed lumped thermal model. Including the temperature effect, iTEM provides more accurate electromigration reliability diagnosis. Moreover, it is very fast and can analyze circuit layouts containing tens of thousands of transistors on a desktop workstation.

AB - In this paper, we present a new electromigration reliability diagnosis tool (iTEM) for CMOS VLSI circuits. Unlike previous electromigration reliability tools, iTEM can estimate the interconnect temperature rise due to joule heating and heat conduction from the substrate using a newly developed lumped thermal model. Including the temperature effect, iTEM provides more accurate electromigration reliability diagnosis. Moreover, it is very fast and can analyze circuit layouts containing tens of thousands of transistors on a desktop workstation.

UR - http://www.scopus.com/inward/record.url?scp=0029721320&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029721320&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0029721320

SP - 172

EP - 179

JO - Annual Proceedings - Reliability Physics (Symposium)

JF - Annual Proceedings - Reliability Physics (Symposium)

SN - 0099-9512

ER -