Isotopic hydrogen exchange studies of the a-Si:H surface during growth

John R. Abelson, Lisa Mandrell, James R. Doyle, Alan Myers, Nagi Maley

Research output: Contribution to journalArticlepeer-review

Abstract

An experiment that directly observes the H2 elimination reaction from the surface of a-Si:H during growth by reactive magnetron sputtering is described. Mass spectrometry is used to detect desorbing HD molecules from an a-Si:D film exposed to a silicon-hydrogen growth flux. We infer that the surface kinetics is rate limited by the arrival of film precursors and not surface reorganization reactions for typical deposition conditions, and that the arriving growth flux is relatively hydrogen poor compared to grow discharge deposition.

Original languageEnglish (US)
Pages (from-to)184-186
Number of pages3
JournalJournal of Non-Crystalline Solids
Volume114
Issue numberPART 1
DOIs
StatePublished - Dec 1 1989

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Materials Chemistry

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