Isoelectronic in doping in p-GaN and its effects on InGaN light-emitting diodes

C. S. Kim, H. S. Cheong, D. S. Kang, J. Y. Kim, C. H. Hong, E. K. Suh, H. J. Lee, H. K. Cho, I. Adesida

Research output: Contribution to journalArticlepeer-review


The Effects of isoelectronic In doping in a Mg-doped p-GaN layer on device performance of InGaN light-emitting diodes (LED) were investigated. It was found that there was a decrease of Hall resistivity and contact resistivity in p-GaN with In doping, compared to typical Mg-doped p-GaN. Isoelectronic In doping in p-GaN seems to cause a kind of surfactant effect and/or purification effect similar to the In-doped GaN case, which exhibits a decrease of non-radiative recombination centers and an enhancement of carrier concentration. Light output power and operating voltage were improved by applying an In-doped p-GaN contact layer to the LED.

Original languageEnglish (US)
Pages (from-to)1391-1394
Number of pages4
JournalJournal of the Korean Physical Society
Issue number5 II
StatePublished - Nov 2004
Externally publishedYes


  • Isoelectronic in doping
  • Light-emitting diodes

ASJC Scopus subject areas

  • General Physics and Astronomy


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