Irradiation stability of Pd2Si

M. Nastasi, P. R. Okamoto, R. S. Averback, L. S. Hung, J. C. Barbour, J. W. Mayer

Research output: Contribution to journalArticlepeer-review

Abstract

The irradiation stability of thin film Pd2Si under 400 keV Kr+ ion irradiation was examined in a conventional implanter and in the Argonne National Laboratory high voltage electron microscope (HVEM). Samples irradiated in the conventional implanter at 100 and 300 K to a dose of 1 × 1015 Kr+ cm-2 remained crystalline and ordered. Samples irradiated in the HVEM at 10 K were observed to undergo a crystal-to-amorphous transformation after a dose of 7.5 × 1014 Kr+ cm-2 (approximately three displacements per atom). The amorphous phase was observed to crystallize in the temperature regime between 220 and 300 K. Our results indicate that the stability and amorphization of crystalline Pd2Si is dominated by kinetics rather than by thermodynamics or a complex equilibrium structure.

Original languageEnglish (US)
Pages (from-to)277-286
Number of pages10
JournalJournal of The Less-Common Metals
Volume140
Issue numberC
DOIs
StatePublished - Jun 1988
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)

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