Irradiation stability of Pd2Si

M. Nastasi; P. R. Okamoto; R. S. Averback; L. S. Hung; J. C. Barbour; J. W. Mayer

doi:10.1016/0022-5088(88)90388-8

Irradiation stability of Pd₂Si

M. Nastasi, P. R. Okamoto, R. S. Averback, L. S. Hung, J. C. Barbour, J. W. Mayer

Research output: Contribution to journal › Article › peer-review

Abstract

The irradiation stability of thin film Pd₂Si under 400 keV Kr⁺ ion irradiation was examined in a conventional implanter and in the Argonne National Laboratory high voltage electron microscope (HVEM). Samples irradiated in the conventional implanter at 100 and 300 K to a dose of 1 × 10¹⁵ Kr⁺ cm^-2 remained crystalline and ordered. Samples irradiated in the HVEM at 10 K were observed to undergo a crystal-to-amorphous transformation after a dose of 7.5 × 10¹⁴ Kr⁺ cm^-2 (approximately three displacements per atom). The amorphous phase was observed to crystallize in the temperature regime between 220 and 300 K. Our results indicate that the stability and amorphization of crystalline Pd₂Si is dominated by kinetics rather than by thermodynamics or a complex equilibrium structure.

Original language	English (US)
Pages (from-to)	277-286
Number of pages	10
Journal	Journal of The Less-Common Metals
Volume	140
Issue number	C
DOIs	https://doi.org/10.1016/0022-5088(88)90388-8
State	Published - Jun 1988
Externally published	Yes

ASJC Scopus subject areas

Engineering(all)

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10.1016/0022-5088(88)90388-8

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@article{4ffa2267cc5f411cbde9c8ed6acf178f,

title = "Irradiation stability of Pd2Si",

abstract = "The irradiation stability of thin film Pd2Si under 400 keV Kr+ ion irradiation was examined in a conventional implanter and in the Argonne National Laboratory high voltage electron microscope (HVEM). Samples irradiated in the conventional implanter at 100 and 300 K to a dose of 1 × 1015 Kr+ cm-2 remained crystalline and ordered. Samples irradiated in the HVEM at 10 K were observed to undergo a crystal-to-amorphous transformation after a dose of 7.5 × 1014 Kr+ cm-2 (approximately three displacements per atom). The amorphous phase was observed to crystallize in the temperature regime between 220 and 300 K. Our results indicate that the stability and amorphization of crystalline Pd2Si is dominated by kinetics rather than by thermodynamics or a complex equilibrium structure.",

author = "M. Nastasi and Okamoto, {P. R.} and Averback, {R. S.} and Hung, {L. S.} and Barbour, {J. C.} and Mayer, {J. W.}",

note = "Funding Information: Discussions with Professor David Tumbull and Professor Frans Spaepen are gratefully acknowledged. We also acknowledge the technical assistanceo f Ed Ryan during the HVEM experiments. The work at Cornell was supported in part by the United States Department of Energy (T.A . Kitchens) through a subcontract to the University of California at San Diego (S. S. Lau).",

year = "1988",

month = jun,

doi = "10.1016/0022-5088(88)90388-8",

language = "English (US)",

volume = "140",

pages = "277--286",

journal = "Journal of The Less-Common Metals",

issn = "0022-5088",

publisher = "Elsevier BV",

number = "C",

}

TY - JOUR

T1 - Irradiation stability of Pd2Si

AU - Nastasi, M.

AU - Okamoto, P. R.

AU - Averback, R. S.

AU - Hung, L. S.

AU - Barbour, J. C.

AU - Mayer, J. W.

N1 - Funding Information: Discussions with Professor David Tumbull and Professor Frans Spaepen are gratefully acknowledged. We also acknowledge the technical assistanceo f Ed Ryan during the HVEM experiments. The work at Cornell was supported in part by the United States Department of Energy (T.A . Kitchens) through a subcontract to the University of California at San Diego (S. S. Lau).

PY - 1988/6

Y1 - 1988/6

N2 - The irradiation stability of thin film Pd2Si under 400 keV Kr+ ion irradiation was examined in a conventional implanter and in the Argonne National Laboratory high voltage electron microscope (HVEM). Samples irradiated in the conventional implanter at 100 and 300 K to a dose of 1 × 1015 Kr+ cm-2 remained crystalline and ordered. Samples irradiated in the HVEM at 10 K were observed to undergo a crystal-to-amorphous transformation after a dose of 7.5 × 1014 Kr+ cm-2 (approximately three displacements per atom). The amorphous phase was observed to crystallize in the temperature regime between 220 and 300 K. Our results indicate that the stability and amorphization of crystalline Pd2Si is dominated by kinetics rather than by thermodynamics or a complex equilibrium structure.

AB - The irradiation stability of thin film Pd2Si under 400 keV Kr+ ion irradiation was examined in a conventional implanter and in the Argonne National Laboratory high voltage electron microscope (HVEM). Samples irradiated in the conventional implanter at 100 and 300 K to a dose of 1 × 1015 Kr+ cm-2 remained crystalline and ordered. Samples irradiated in the HVEM at 10 K were observed to undergo a crystal-to-amorphous transformation after a dose of 7.5 × 1014 Kr+ cm-2 (approximately three displacements per atom). The amorphous phase was observed to crystallize in the temperature regime between 220 and 300 K. Our results indicate that the stability and amorphization of crystalline Pd2Si is dominated by kinetics rather than by thermodynamics or a complex equilibrium structure.

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U2 - 10.1016/0022-5088(88)90388-8

DO - 10.1016/0022-5088(88)90388-8

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VL - 140

SP - 277

EP - 286

JO - Journal of The Less-Common Metals

JF - Journal of The Less-Common Metals

IS - C

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