Iridium Schottky contact on in0.52Al0.48As

S. Kim; G. Cueva; Ilesanmi Adesida

doi:10.1049/el:20051022

Iridium Schottky contact on in_0.52Al_0.48As

S. Kim, G. Cueva, Ilesanmi Adesida

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Abstract

The Schottky barrier properties of Ir on In_0.52Al _0.48As have been measured after annealing up to 500°C. The barrier height increases to 818 meV for samples annealed at 475°C, while that of Pt quickly saturates at 800 meV beyond 200°C. The result indicates a potential for Ir as a stable gate metallisation for InAlAs/InGaAs HEMTs.

Original language	English (US)
Pages (from-to)	665-667
Number of pages	3
Journal	Electronics Letters
Volume	41
Issue number	11
DOIs	https://doi.org/10.1049/el:20051022
State	Published - May 26 2005

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:20051022

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Cite this

@article{8e82f8cd828d4895a7010afcfd23d0fe,

title = "Iridium Schottky contact on in0.52Al0.48As",

abstract = "The Schottky barrier properties of Ir on In0.52Al 0.48As have been measured after annealing up to 500°C. The barrier height increases to 818 meV for samples annealed at 475°C, while that of Pt quickly saturates at 800 meV beyond 200°C. The result indicates a potential for Ir as a stable gate metallisation for InAlAs/InGaAs HEMTs.",

author = "S. Kim and G. Cueva and Ilesanmi Adesida",

year = "2005",

month = may,

day = "26",

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pages = "665--667",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "Institution of Engineering and Technology",

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AU - Kim, S.

AU - Cueva, G.

AU - Adesida, Ilesanmi

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Y1 - 2005/5/26

N2 - The Schottky barrier properties of Ir on In0.52Al 0.48As have been measured after annealing up to 500°C. The barrier height increases to 818 meV for samples annealed at 475°C, while that of Pt quickly saturates at 800 meV beyond 200°C. The result indicates a potential for Ir as a stable gate metallisation for InAlAs/InGaAs HEMTs.

AB - The Schottky barrier properties of Ir on In0.52Al 0.48As have been measured after annealing up to 500°C. The barrier height increases to 818 meV for samples annealed at 475°C, while that of Pt quickly saturates at 800 meV beyond 200°C. The result indicates a potential for Ir as a stable gate metallisation for InAlAs/InGaAs HEMTs.

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