The Schottky barrier properties of Ir on In0.52Al 0.48As have been measured after annealing up to 500°C. The barrier height increases to 818 meV for samples annealed at 475°C, while that of Pt quickly saturates at 800 meV beyond 200°C. The result indicates a potential for Ir as a stable gate metallisation for InAlAs/InGaAs HEMTs.
|Original language||English (US)|
|Number of pages||3|
|State||Published - May 26 2005|
ASJC Scopus subject areas
- Electrical and Electronic Engineering