Ion mixing and thermochemical properties of markers in Cu

S. J. Kim, M. A. Nicolet, R. S. Averback

Research output: Contribution to journalArticlepeer-review

Abstract

Markers of Nb, Ru, Ag, In, Sb, Hf, Pt, Au, and Bi in Cu were mixed by irradiation with 750 keV Kr at 77 K and analyzed in situ by backscattering of 1. 9 MeV He** plus . Cu with Pt and Au markers were also irradiated and analyzed at 7 K. The results were identical to those obtained at 77 K results. The measured mixing efficiencies Dt/ phi F//D, for the various markers correlate with their respective impurity tracer diffusivities and impurity-vacancy binding energies in Cu. The correlation suggests that diffusion by a vacancy mechanism during a thermal spike as an important process in ion mixing of marker atoms in Cu.

Original languageEnglish (US)
Pages (from-to)171-174
Number of pages4
JournalApplied Physics A Solids and Surfaces
Volume41
Issue number3
DOIs
StatePublished - Nov 1 1986
Externally publishedYes

Keywords

  • 61.80
  • 66.30

ASJC Scopus subject areas

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy (miscellaneous)

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