Abstract
Markers of Nb, Ru, Ag, In, Sb, Hf, Pt, Au, and Bi in Cu were mixed by irradiation with 750 keV Kr at 77 K and analyzed in situ by backscattering of 1. 9 MeV He** plus . Cu with Pt and Au markers were also irradiated and analyzed at 7 K. The results were identical to those obtained at 77 K results. The measured mixing efficiencies Dt/ phi F//D, for the various markers correlate with their respective impurity tracer diffusivities and impurity-vacancy binding energies in Cu. The correlation suggests that diffusion by a vacancy mechanism during a thermal spike as an important process in ion mixing of marker atoms in Cu.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 171-174 |
| Number of pages | 4 |
| Journal | Applied Physics A Solids and Surfaces |
| Volume | 41 |
| Issue number | 3 |
| DOIs | |
| State | Published - Nov 1986 |
| Externally published | Yes |
Keywords
- 61.80
- 66.30
ASJC Scopus subject areas
- General Materials Science
- General Engineering
- Physics and Astronomy (miscellaneous)