Ion-irradiation-induced stresses and swelling in amorphous Ge thin films

S. G. Mayr, Robert S Averback

Research output: Contribution to journalArticlepeer-review

Abstract

Mechanical stresses and morphology during growth and ion bombardment of amorphous Ge thin films are investigated by a combination of in situ stress measurements and molecular dynamics computer simulations. Strong compressive stresses are generated during irradiation that subsequently lead to severe swelling. The simulations indicate that interstitial-mediated viscous flow in combination with well-localized vacancy defects are the main ingredients responsible for the observed phenomena.

Original languageEnglish (US)
Article number134102
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume71
Issue number13
DOIs
StatePublished - Dec 15 2005

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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