Ion-Implanted In_(x)Ga_(1-x) As MESFET’s on GaAs Substrate for Low-Cost Millimeter-Wave IC Application

Keyphrases

• GaAs Substrate 100%
• Ion Implantation 100%
• MESFET 100%
• Millimeter-wave IC 100%
• Material Structure 66%
• Manufacturability 66%
• Device Fabrication 33%
• Low Noise 33%
• Current Gain Cutoff Frequency 33%
• Noise Power 33%
• Ultra-high Frequency 33%
• Maximum Power 33%
• Oscillation Frequency 33%
• Circuit Application 33%
• GaAs MESFET 33%
• Frequency Performance 33%
• Power Oscillation 33%
• Ion Implantation Technology 33%
• Performance Noise 33%
• Technology Focus 33%
• Ultra-high-speed Integrated Circuits 33%
• Millimeter-wave Frequency 33%

Engineering

• Gaas Substrate 100%
• Manufacturability 100%
• Millimeter Wave 100%
• Integrated Circuit 50%
• Gallium Arsenide 50%
• Device Structure 50%
• Ion Implantation 50%
• Current Gain 50%
• Cutoff Frequency 50%
• Noise Power 50%