Ion-implanted In(x)Ga(l -x)As MESFET’s on GaAs substrate are very attractive devices for ultra-high-frequency and ultra-high-speed integrated circuit applications due to the simplicity of material structure and manufacturability of ion implantation technology. This paper presents and reviews the advances of ion-implanted In(x)Ga(1-x)As/GaAs MESFET technology focus on material structures, device fabrications, manufacturability, current gain cutoff frequency, and maximum power oscillation frequency performance, as well as low noise, power, and oscillator performance in millimeter-wave frequency range.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering