Ion-Implanted In(x)Ga(1-x) As MESFET’s on GaAs Substrate for Low-Cost Millimeter-Wave IC Application

Milton Feng

doi:10.1109/16.123467

Ion-Implanted In_(x)Ga_(1-x) As MESFET’s on GaAs Substrate for Low-Cost Millimeter-Wave IC Application

Milton Feng

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Ion-implanted In_(x)Ga_(l -_x)As MESFET’s on GaAs substrate are very attractive devices for ultra-high-frequency and ultra-high-speed integrated circuit applications due to the simplicity of material structure and manufacturability of ion implantation technology. This paper presents and reviews the advances of ion-implanted In_(x)Ga_(1-x)As/GaAs MESFET technology focus on material structures, device fabrications, manufacturability, current gain cutoff frequency, and maximum power oscillation frequency performance, as well as low noise, power, and oscillator performance in millimeter-wave frequency range.

Original language	English (US)
Pages (from-to)	484-493
Number of pages	10
Journal	IEEE Transactions on Electron Devices
Volume	39
Issue number	3
DOIs	https://doi.org/10.1109/16.123467
State	Published - Mar 1992

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Online availability

10.1109/16.123467

Library availability

Discover UIUC Full Text

Cite this

@article{820104f6497e48f08a19e3df7bbf32af,

title = "Ion-Implanted In(x)Ga(1-x) As MESFET{\textquoteright}s on GaAs Substrate for Low-Cost Millimeter-Wave IC Application",

abstract = "Ion-implanted In(x)Ga(l -x)As MESFET{\textquoteright}s on GaAs substrate are very attractive devices for ultra-high-frequency and ultra-high-speed integrated circuit applications due to the simplicity of material structure and manufacturability of ion implantation technology. This paper presents and reviews the advances of ion-implanted In(x)Ga(1-x)As/GaAs MESFET technology focus on material structures, device fabrications, manufacturability, current gain cutoff frequency, and maximum power oscillation frequency performance, as well as low noise, power, and oscillator performance in millimeter-wave frequency range.",

author = "Milton Feng",

note = "Funding Information: Manuscript received January 3, 1991; revised June 17, 1991. This work was supported by the National Science Foundation under Grant NSF ECD 89-43166. The review of this paper was arranged by Associate Editor M. Shur. M. Feng is with the Department of Electrical and Computer Engineering, University of Illinois, Urbana, IL 61801. C. L. Lau is with GaAstronics Inc., Colorado Springs, CO 80919. IEEE Log Number 9105326.",

year = "1992",

month = mar,

doi = "10.1109/16.123467",

language = "English (US)",

volume = "39",

pages = "484--493",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "3",

}

TY - JOUR

T1 - Ion-Implanted In(x)Ga(1-x) As MESFET’s on GaAs Substrate for Low-Cost Millimeter-Wave IC Application

AU - Feng, Milton

N1 - Funding Information: Manuscript received January 3, 1991; revised June 17, 1991. This work was supported by the National Science Foundation under Grant NSF ECD 89-43166. The review of this paper was arranged by Associate Editor M. Shur. M. Feng is with the Department of Electrical and Computer Engineering, University of Illinois, Urbana, IL 61801. C. L. Lau is with GaAstronics Inc., Colorado Springs, CO 80919. IEEE Log Number 9105326.

PY - 1992/3

Y1 - 1992/3

N2 - Ion-implanted In(x)Ga(l -x)As MESFET’s on GaAs substrate are very attractive devices for ultra-high-frequency and ultra-high-speed integrated circuit applications due to the simplicity of material structure and manufacturability of ion implantation technology. This paper presents and reviews the advances of ion-implanted In(x)Ga(1-x)As/GaAs MESFET technology focus on material structures, device fabrications, manufacturability, current gain cutoff frequency, and maximum power oscillation frequency performance, as well as low noise, power, and oscillator performance in millimeter-wave frequency range.

AB - Ion-implanted In(x)Ga(l -x)As MESFET’s on GaAs substrate are very attractive devices for ultra-high-frequency and ultra-high-speed integrated circuit applications due to the simplicity of material structure and manufacturability of ion implantation technology. This paper presents and reviews the advances of ion-implanted In(x)Ga(1-x)As/GaAs MESFET technology focus on material structures, device fabrications, manufacturability, current gain cutoff frequency, and maximum power oscillation frequency performance, as well as low noise, power, and oscillator performance in millimeter-wave frequency range.

UR - http://www.scopus.com/inward/record.url?scp=0026839607&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0026839607&partnerID=8YFLogxK

U2 - 10.1109/16.123467

DO - 10.1109/16.123467

M3 - Article

AN - SCOPUS:0026839607

SN - 0018-9383

VL - 39

SP - 484

EP - 493

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 3

ER -