Ion-implanted In0.1Ga0.9 As metal-semiconductor field-effect transistors on GaAs (100) substrates

M. Feng, G. W. Wang, Y. P. Liaw, R. W. Kaliski, C. L. Lau, C. Ito

Research output: Contribution to journalArticlepeer-review

Abstract

Ion-implanted In0.1Ga0.9As metal-semiconductor field-effect transistors (MESFETs) have been fabricated on 3 in. GaAs (100) substrates. The structure comprises an undoped InGaAs epitaxially layer grown directly on a GaAs (100) substrate by the metalorganic chemical vapor deposition (MOCVD) technique. Si+28 is ion implanted into the InGaAs layer to form an active channel layer. MESFETs with 100 μm gate width and 0.5 μm gate length are fabricated using standard process techniques. The best device shows a maximum transconductance of 426 mS/mm. From S-parameter measurements, the current-gain cutoff frequency ft is 37 GHz and the maximum available gain cutoff frequency fmax is 85 GHz. These results are comparable to InGaAs MESFETs grown by MBE.

Original languageEnglish (US)
Pages (from-to)568-569
Number of pages2
JournalApplied Physics Letters
Volume55
Issue number6
DOIs
StatePublished - 1989
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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