Ion-implanted GaAs/AlGaAs heterojunction FET's grown by MOCVD

G. W. Wang; Milton Feng; Y. P. Liaw; Robert Kaliski; C. L. Lau; C. Ito

doi:10.1109/55.31741

Ion-implanted GaAs/AlGaAs heterojunction FET's grown by MOCVD

G. W. Wang, Milton Feng, Y. P. Liaw, Robert Kaliski, C. L. Lau, C. Ito

Research output: Contribution to journal › Article › peer-review

Abstract

The successful fabrication of an ion-implanted GaAs/AlGaAs heterojunction FET device is discussed. Half-micrometer gate-length FET devices are fabricated by ion implantation into GaAs/AlGaAs heterostructures grown by metalorganic chemical vapor deposition (MOCVD) on 3-in-diameter GaAs substrates. The FET device exhibits a maximum extrinsic transconductance of 280 mS/mm with reduced transconductance variation over 2 V of gate bias. Excellent microwave performance is achieved with an f_t of 40 GHz, which is comparable to results obtained from 0.25-μm gate GaAs MESFETs. The effects of ion implantation on the heterojunction and corresponding device characteristics are also discussed.

Original language	English (US)
Pages (from-to)	264-266
Number of pages	3
Journal	Electron device letters
Volume	10
Issue number	6
DOIs	https://doi.org/10.1109/55.31741
State	Published - 1989
Externally published	Yes

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title = "Ion-implanted GaAs/AlGaAs heterojunction FET's grown by MOCVD",

abstract = "The successful fabrication of an ion-implanted GaAs/AlGaAs heterojunction FET device is discussed. Half-micrometer gate-length FET devices are fabricated by ion implantation into GaAs/AlGaAs heterostructures grown by metalorganic chemical vapor deposition (MOCVD) on 3-in-diameter GaAs substrates. The FET device exhibits a maximum extrinsic transconductance of 280 mS/mm with reduced transconductance variation over 2 V of gate bias. Excellent microwave performance is achieved with an ft of 40 GHz, which is comparable to results obtained from 0.25-μm gate GaAs MESFETs. The effects of ion implantation on the heterojunction and corresponding device characteristics are also discussed.",

author = "Wang, {G. W.} and Milton Feng and Liaw, {Y. P.} and Robert Kaliski and Lau, {C. L.} and C. Ito",

year = "1989",

doi = "10.1109/55.31741",

language = "English (US)",

volume = "10",

pages = "264--266",

journal = "Electron device letters",

issn = "0193-8576",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "6",

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TY - JOUR

T1 - Ion-implanted GaAs/AlGaAs heterojunction FET's grown by MOCVD

AU - Wang, G. W.

AU - Feng, Milton

AU - Liaw, Y. P.

AU - Kaliski, Robert

AU - Lau, C. L.

AU - Ito, C.

PY - 1989

Y1 - 1989

N2 - The successful fabrication of an ion-implanted GaAs/AlGaAs heterojunction FET device is discussed. Half-micrometer gate-length FET devices are fabricated by ion implantation into GaAs/AlGaAs heterostructures grown by metalorganic chemical vapor deposition (MOCVD) on 3-in-diameter GaAs substrates. The FET device exhibits a maximum extrinsic transconductance of 280 mS/mm with reduced transconductance variation over 2 V of gate bias. Excellent microwave performance is achieved with an ft of 40 GHz, which is comparable to results obtained from 0.25-μm gate GaAs MESFETs. The effects of ion implantation on the heterojunction and corresponding device characteristics are also discussed.

AB - The successful fabrication of an ion-implanted GaAs/AlGaAs heterojunction FET device is discussed. Half-micrometer gate-length FET devices are fabricated by ion implantation into GaAs/AlGaAs heterostructures grown by metalorganic chemical vapor deposition (MOCVD) on 3-in-diameter GaAs substrates. The FET device exhibits a maximum extrinsic transconductance of 280 mS/mm with reduced transconductance variation over 2 V of gate bias. Excellent microwave performance is achieved with an ft of 40 GHz, which is comparable to results obtained from 0.25-μm gate GaAs MESFETs. The effects of ion implantation on the heterojunction and corresponding device characteristics are also discussed.

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JO - Electron device letters

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IS - 6

ER -

Ion-implanted GaAs/AlGaAs heterojunction FET's grown by MOCVD

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