Ion-implanted GaAs/AlGaAs heterojunction FET's grown by MOCVD

G. W. Wang, Milton Feng, Y. P. Liaw, Robert Kaliski, C. L. Lau, C. Ito

Research output: Contribution to journalArticlepeer-review


The successful fabrication of an ion-implanted GaAs/AlGaAs heterojunction FET device is discussed. Half-micrometer gate-length FET devices are fabricated by ion implantation into GaAs/AlGaAs heterostructures grown by metalorganic chemical vapor deposition (MOCVD) on 3-in-diameter GaAs substrates. The FET device exhibits a maximum extrinsic transconductance of 280 mS/mm with reduced transconductance variation over 2 V of gate bias. Excellent microwave performance is achieved with an ft of 40 GHz, which is comparable to results obtained from 0.25-μm gate GaAs MESFETs. The effects of ion implantation on the heterojunction and corresponding device characteristics are also discussed.

Original languageEnglish (US)
Pages (from-to)264-266
Number of pages3
JournalElectron device letters
Issue number6
StatePublished - 1989
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)


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