Abstract

The spatial distribution of ion deposited energy is often assumed to linearly relate to the local ion-induced sputtering of atoms from a solid surface. This-along with the assumption of an ellipsoidal region of energy deposition-is the central mechanism used in the Bradley and Harper [J. Vac. Sci. Technol. A 6, 2390 (1988)] explanation of ion-induced surface instabilities, but it has never been assessed directly. To do this, we use molecular dynamics to compute the actual distribution of deposited energy and relate this to the source of sputtered atoms for a range of ion energies (250 eV and 1500 eV), ion species (Ar, Kr, Xe, and Rn), targets (Si and Ge), and incidence angles (0°, 10°, 20°, 30°, 40°, 50°, 60°, 70°, and 80°). It is found that the energy deposition profile is remarkably ellipsoidal but that the relation between local deposited energy and local sputtering is not simple. It depends significantly upon the incidence angle, and the relation between energy and local sputter yield is nonlinear, though with a nearly uniform power-law relation. These results will affect, in particular, surface instability models based upon simpler approximations.

Original languageEnglish (US)
Article number103513
JournalJournal of Applied Physics
Volume111
Issue number10
DOIs
StatePublished - May 15 2012

Fingerprint

ion impact
energy distribution
sputtering
ions
energy
incidence
solid surfaces
atoms
spatial distribution
molecular dynamics
profiles
approximation

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Ion impact energy distribution and sputtering of Si and Ge. / Hossain, M. Z.; Freund, J. B.; Johnson, H. T.

In: Journal of Applied Physics, Vol. 111, No. 10, 103513, 15.05.2012.

Research output: Contribution to journalArticle

@article{27f6ac209c28486aa10d0830445a3d13,
title = "Ion impact energy distribution and sputtering of Si and Ge",
abstract = "The spatial distribution of ion deposited energy is often assumed to linearly relate to the local ion-induced sputtering of atoms from a solid surface. This-along with the assumption of an ellipsoidal region of energy deposition-is the central mechanism used in the Bradley and Harper [J. Vac. Sci. Technol. A 6, 2390 (1988)] explanation of ion-induced surface instabilities, but it has never been assessed directly. To do this, we use molecular dynamics to compute the actual distribution of deposited energy and relate this to the source of sputtered atoms for a range of ion energies (250 eV and 1500 eV), ion species (Ar, Kr, Xe, and Rn), targets (Si and Ge), and incidence angles (0°, 10°, 20°, 30°, 40°, 50°, 60°, 70°, and 80°). It is found that the energy deposition profile is remarkably ellipsoidal but that the relation between local deposited energy and local sputtering is not simple. It depends significantly upon the incidence angle, and the relation between energy and local sputter yield is nonlinear, though with a nearly uniform power-law relation. These results will affect, in particular, surface instability models based upon simpler approximations.",
author = "Hossain, {M. Z.} and Freund, {J. B.} and Johnson, {H. T.}",
year = "2012",
month = "5",
day = "15",
doi = "10.1063/1.4718024",
language = "English (US)",
volume = "111",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "10",

}

TY - JOUR

T1 - Ion impact energy distribution and sputtering of Si and Ge

AU - Hossain, M. Z.

AU - Freund, J. B.

AU - Johnson, H. T.

PY - 2012/5/15

Y1 - 2012/5/15

N2 - The spatial distribution of ion deposited energy is often assumed to linearly relate to the local ion-induced sputtering of atoms from a solid surface. This-along with the assumption of an ellipsoidal region of energy deposition-is the central mechanism used in the Bradley and Harper [J. Vac. Sci. Technol. A 6, 2390 (1988)] explanation of ion-induced surface instabilities, but it has never been assessed directly. To do this, we use molecular dynamics to compute the actual distribution of deposited energy and relate this to the source of sputtered atoms for a range of ion energies (250 eV and 1500 eV), ion species (Ar, Kr, Xe, and Rn), targets (Si and Ge), and incidence angles (0°, 10°, 20°, 30°, 40°, 50°, 60°, 70°, and 80°). It is found that the energy deposition profile is remarkably ellipsoidal but that the relation between local deposited energy and local sputtering is not simple. It depends significantly upon the incidence angle, and the relation between energy and local sputter yield is nonlinear, though with a nearly uniform power-law relation. These results will affect, in particular, surface instability models based upon simpler approximations.

AB - The spatial distribution of ion deposited energy is often assumed to linearly relate to the local ion-induced sputtering of atoms from a solid surface. This-along with the assumption of an ellipsoidal region of energy deposition-is the central mechanism used in the Bradley and Harper [J. Vac. Sci. Technol. A 6, 2390 (1988)] explanation of ion-induced surface instabilities, but it has never been assessed directly. To do this, we use molecular dynamics to compute the actual distribution of deposited energy and relate this to the source of sputtered atoms for a range of ion energies (250 eV and 1500 eV), ion species (Ar, Kr, Xe, and Rn), targets (Si and Ge), and incidence angles (0°, 10°, 20°, 30°, 40°, 50°, 60°, 70°, and 80°). It is found that the energy deposition profile is remarkably ellipsoidal but that the relation between local deposited energy and local sputtering is not simple. It depends significantly upon the incidence angle, and the relation between energy and local sputter yield is nonlinear, though with a nearly uniform power-law relation. These results will affect, in particular, surface instability models based upon simpler approximations.

UR - http://www.scopus.com/inward/record.url?scp=84862131937&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84862131937&partnerID=8YFLogxK

U2 - 10.1063/1.4718024

DO - 10.1063/1.4718024

M3 - Article

AN - SCOPUS:84862131937

VL - 111

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 10

M1 - 103513

ER -