Ion beam nanopatterning of III-V semiconductors: consistency of experimental and simulation trends within a chemistry-driven theory

O. El-atwani, S. A. Norris, K. Ludwig, S. Gonderman, J. P. Allain

Research output: Contribution to journalArticle

Original languageEnglish (US)
Pages (from-to)18207
JournalScientific Reports
Volume5
DOIs
StatePublished - Dec 16 2015

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Ion beams
Semiconductor materials

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Ion beam nanopatterning of III-V semiconductors: consistency of experimental and simulation trends within a chemistry-driven theory. / El-atwani, O.; Norris, S. A.; Ludwig, K.; Gonderman, S.; Allain, J. P.

In: Scientific Reports, Vol. 5, 16.12.2015, p. 18207.

Research output: Contribution to journalArticle

El-atwani, O.; Norris, S. A.; Ludwig, K.; Gonderman, S.; Allain, J. P. / Ion beam nanopatterning of III-V semiconductors: consistency of experimental and simulation trends within a chemistry-driven theory.

In: Scientific Reports, Vol. 5, 16.12.2015, p. 18207.

Research output: Contribution to journalArticle

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title = "Ion beam nanopatterning of III-V semiconductors: consistency of experimental and simulation trends within a chemistry-driven theory",
author = "O. El-atwani and Norris, {S. A.} and K. Ludwig and S. Gonderman and Allain, {J. P.}",
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AU - Allain,J. P.

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