Ion beam mixing of marker layers in Al and Si

S. Mantl, L. E. Rehn, Robert S Averback, L. J. Thompson

Research output: Contribution to journalArticlepeer-review


Ion beam mixing experiments on thin Pt, Au, and Ni markers in Al and Si have been performed at 17, 85, and 300 K. After irradiation with 300 keV Ar ions the broadening and relative shifts of the markers have been determined by RBS measurements. The marker broadenings are more pronounced in Si than in Ai; in both matrices the broadenings decrease in the following order: Au, Pt, and Ni. No dependence of mixing on irradiation temperature was observed between 17 and 300 K. The shifts of the heavy Au and Pt markers relative to the Ni markers are approximately equal to the experimental accuracy. However, a shift of the Ni marker toward the surface relative to the heavier Au and Pt markers was consistently observed.

Original languageEnglish (US)
Pages (from-to)622-625
Number of pages4
JournalNuclear Inst. and Methods in Physics Research, B
Issue numberPART 2
StatePublished - Mar 1985
Externally publishedYes

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation


Dive into the research topics of 'Ion beam mixing of marker layers in Al and Si'. Together they form a unique fingerprint.

Cite this