Abstract
The ion beam mixing behavior of InGaAs/GaAs strained layer superlattice structures grown by metalorganic chemical vapor deposition was studied using secondary ion mass spectroscopy and Rutherford backscattering channeling. The fluence dependence of intermixing by MeV Kr+ irradiation has been investigated. Significant intermixing occurs for fluences much lower than for similar intermixing in other superlattice systems (i.e. ALAs/GaAs). The intermixing exhibits no temperature dependence for fluences of 2 x 1015 to 5 x 1015 cm-2 which sharply contrasts with the behavior of the AlAs/GaAs superlattice system which shows a strong temperature dependence, including a miscibility gap, in the temperature range 523 to 973K. Samples irradiated at 573K retain a high degree of crystallinity when compared to lower temperature irradiations indicating that the InGaAs/GaAs superlattice can be disordered and still retain crystallinity.
Original language | English (US) |
---|---|
Pages (from-to) | 175-178 |
Number of pages | 4 |
Journal | Journal of Electronic Materials |
Volume | 23 |
Issue number | 2 |
DOIs | |
State | Published - Feb 1994 |
Keywords
- (SIMS)
- InGaAs/GaAs
- metalorganic chemical vapor deposition (MOCVD)
- Rutherford backscattering (RBS)
- secondary ion mass spectroscopy
- superlattice
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
- Electronic, Optical and Magnetic Materials
- General Materials Science
- Electrical and Electronic Engineering