Ion beam mixing characteristics of MOCVD grown InGaAs/GaAs superlattices

D. V. Forbes, J. J. Coleman, J. K. Klatt, R. S. Averback

Research output: Contribution to journalArticlepeer-review

Abstract

The ion beam mixing behavior of InGaAs/GaAs strained layer superlattice structures grown by metalorganic chemical vapor deposition was studied using secondary ion mass spectroscopy and Rutherford backscattering channeling. The fluence dependence of intermixing by MeV Kr+ irradiation has been investigated. Significant intermixing occurs for fluences much lower than for similar intermixing in other superlattice systems (i.e. ALAs/GaAs). The intermixing exhibits no temperature dependence for fluences of 2 x 1015 to 5 x 1015 cm-2 which sharply contrasts with the behavior of the AlAs/GaAs superlattice system which shows a strong temperature dependence, including a miscibility gap, in the temperature range 523 to 973K. Samples irradiated at 573K retain a high degree of crystallinity when compared to lower temperature irradiations indicating that the InGaAs/GaAs superlattice can be disordered and still retain crystallinity.

Original languageEnglish (US)
Pages (from-to)175-178
Number of pages4
JournalJournal of Electronic Materials
Volume23
Issue number2
DOIs
StatePublished - Feb 1 1994

Keywords

  • (SIMS)
  • InGaAs/GaAs
  • metalorganic chemical vapor deposition (MOCVD)
  • Rutherford backscattering (RBS)
  • secondary ion mass spectroscopy
  • superlattice

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Electrical and Electronic Engineering

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