Ion beam mixing at nickel-silicon interfaces

R. S. Averback, L. J. Thompson, J. Moyle, M. Schalit

Research output: Contribution to journalArticle

Abstract

Ion-beam mixing at Ni-Si interfaces was investigated as a function of dose, temperature, and dose rate. In the temperature range 10-443 K, the thickness of the mixed Ni-Si layer grew proportionally to the square root of dose for 250-keV Kr** plus irradiations. The apparent diffusion coefficient for mixing during irradiation comprises temperature-dependent and independent contributions. The activation enthalpy for the temperature-dependent part is approximately 0. 09 ev. Varying the dose rate by a factor of approximately 20 had little effect upon mixing at either 80 or 368 K. Analysis of these results using chemical rate theory showed that the low activation enthalpy for diffusion was not associated with point-defect motion. More likely the temperature dependence of mixing in Ni-Si is associated with the effect of temperature on compound formation.

Original languageEnglish (US)
Pages (from-to)1342-1349
Number of pages8
JournalJournal of Applied Physics
Volume53
Issue number3
DOIs
StatePublished - Dec 1 1982

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ion beams
nickel
silicon
dosage
enthalpy
temperature
activation
irradiation
point defects
diffusion coefficient
temperature dependence

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Ion beam mixing at nickel-silicon interfaces. / Averback, R. S.; Thompson, L. J.; Moyle, J.; Schalit, M.

In: Journal of Applied Physics, Vol. 53, No. 3, 01.12.1982, p. 1342-1349.

Research output: Contribution to journalArticle

Averback, RS, Thompson, LJ, Moyle, J & Schalit, M 1982, 'Ion beam mixing at nickel-silicon interfaces', Journal of Applied Physics, vol. 53, no. 3, pp. 1342-1349. https://doi.org/10.1063/1.330624
Averback, R. S. ; Thompson, L. J. ; Moyle, J. ; Schalit, M. / Ion beam mixing at nickel-silicon interfaces. In: Journal of Applied Physics. 1982 ; Vol. 53, No. 3. pp. 1342-1349.
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