ION BEAM LITHOGRAPHY AT NANOMETER DIMENSIONS.

I. Adesida; E. Kratschmer; E. D. Wolf; A. Muray; M. Isaacson

doi:10.1116/1.583288

ION BEAM LITHOGRAPHY AT NANOMETER DIMENSIONS.

I. Adesida, E. Kratschmer, E. D. Wolf, A. Muray, M. Isaacson

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Abstract

Factors affecting the ultimate resolution of ion beam lithography are discussed. These factors are primary ion scattering, recoil atom scattering, range of secondary electrons, and resist properties (i. e. , resist sensitivity and molecule size in the resist). From a consideration of these factors, it is estimated that minimum linewidths of approximately less than 10 nm can be achieved in polymethyl methacrylate (PMMA) using light ions. For heavy ions such as gallium, the resolution limit is estimated to be approximately 30 nm with the limitation being due to recoil atom scattering. Fabrication of high resolution silicon nitride stencil masks is described and replication of the masks with protons in PMMA is demonstrated with features as small as 20 nm.

Original language	English (US)
Title of host publication	Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
Pages	45-49
Number of pages	5
Volume	3
Edition	1
DOIs	https://doi.org/10.1116/1.583288
State	Published - Jan 1984
Event	Proc of the 1984 Int Symp on Electron, Ion, and Photon Beams - Tarrytown, NY, USA Duration: May 29 1984 → Jun 1 1984

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Other	Proc of the 1984 Int Symp on Electron, Ion, and Photon Beams
City	Tarrytown, NY, USA
Period	5/29/84 → 6/1/84

ASJC Scopus subject areas

Engineering(all)

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10.1116/1.583288

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title = "ION BEAM LITHOGRAPHY AT NANOMETER DIMENSIONS.",

abstract = "Factors affecting the ultimate resolution of ion beam lithography are discussed. These factors are primary ion scattering, recoil atom scattering, range of secondary electrons, and resist properties (i. e. , resist sensitivity and molecule size in the resist). From a consideration of these factors, it is estimated that minimum linewidths of approximately less than 10 nm can be achieved in polymethyl methacrylate (PMMA) using light ions. For heavy ions such as gallium, the resolution limit is estimated to be approximately 30 nm with the limitation being due to recoil atom scattering. Fabrication of high resolution silicon nitride stencil masks is described and replication of the masks with protons in PMMA is demonstrated with features as small as 20 nm.",

author = "I. Adesida and E. Kratschmer and Wolf, {E. D.} and A. Muray and M. Isaacson",

year = "1984",

month = jan,

doi = "10.1116/1.583288",

language = "English (US)",

isbn = "0883184648",

volume = "3",

pages = "45--49",

booktitle = "Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena",

edition = "1",

note = "Proc of the 1984 Int Symp on Electron, Ion, and Photon Beams ; Conference date: 29-05-1984 Through 01-06-1984",

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T1 - ION BEAM LITHOGRAPHY AT NANOMETER DIMENSIONS.

AU - Adesida, I.

AU - Kratschmer, E.

AU - Wolf, E. D.

AU - Muray, A.

AU - Isaacson, M.

PY - 1984/1

Y1 - 1984/1

N2 - Factors affecting the ultimate resolution of ion beam lithography are discussed. These factors are primary ion scattering, recoil atom scattering, range of secondary electrons, and resist properties (i. e. , resist sensitivity and molecule size in the resist). From a consideration of these factors, it is estimated that minimum linewidths of approximately less than 10 nm can be achieved in polymethyl methacrylate (PMMA) using light ions. For heavy ions such as gallium, the resolution limit is estimated to be approximately 30 nm with the limitation being due to recoil atom scattering. Fabrication of high resolution silicon nitride stencil masks is described and replication of the masks with protons in PMMA is demonstrated with features as small as 20 nm.

AB - Factors affecting the ultimate resolution of ion beam lithography are discussed. These factors are primary ion scattering, recoil atom scattering, range of secondary electrons, and resist properties (i. e. , resist sensitivity and molecule size in the resist). From a consideration of these factors, it is estimated that minimum linewidths of approximately less than 10 nm can be achieved in polymethyl methacrylate (PMMA) using light ions. For heavy ions such as gallium, the resolution limit is estimated to be approximately 30 nm with the limitation being due to recoil atom scattering. Fabrication of high resolution silicon nitride stencil masks is described and replication of the masks with protons in PMMA is demonstrated with features as small as 20 nm.

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DO - 10.1116/1.583288

M3 - Conference contribution

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EP - 49

BT - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

T2 - Proc of the 1984 Int Symp on Electron, Ion, and Photon Beams

Y2 - 29 May 1984 through 1 June 1984

ER -

ION BEAM LITHOGRAPHY AT NANOMETER DIMENSIONS.

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