Abstract
A comprehensive Monte Carlo program (PIBER) was developed for the simulation of ion beam exposure of resists. PIBER has been used to study ion ranges, backscattering coefficients, and energy-loss distribution data for various combinations of incident ions and multilayered targets. For lithographic applications, the spatial ion energy-loss distribution in polymethyl methacrylate (PMMA) generated with PIBER for a delta -function exposure is convoluted with realistic incident ion beam shape (Gaussian, square, etc. ) to produce latent images. A string development model is then used to generate developed ion beam exposure profiles in PMMA. The developed profiles for isolated lines have been studied as a function of parameters such as ion energy, resist thickness, and exposure dosage.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 1259-1263 |
| Number of pages | 5 |
| Journal | Journal of vacuum science & technology |
| Volume | 19 |
| Issue number | 4 |
| DOIs | |
| State | Published - 1981 |
| Externally published | Yes |
| Event | Proc of the Electron, Ion, and Photon Beam Technol, 16th - Dallas, TX, USA Duration: May 26 1981 → May 29 1981 |
ASJC Scopus subject areas
- Engineering(all)