Ion Beam Etching of Silicon, Refractory Metals, and Refractory Metal Silicides Using a Chemistry Assisted Technique

Engineering & Materials Science

• Refractory metals 100%
• Ion beams 93%
• Silicides 90%
• Silicon 51%
• Ultrahigh vacuum 17%
• Linewidth 13%
• Vapor pressure 13%
• Gases 12%
• Impurities 10%
• Ions 10%
• Oxides 9%
• Fluxes 8%
• Hydrogen 8%

Chemical Compounds

• Refractory Metal 90%
• Etching 59%
• Chemistry 38%
• Vapor Pressure 10%
• Partial Pressure 10%
• Vacuum 8%
• Dimension 8%
• Oxide 5%
• Hydrogen 5%
• Liquid Film 5%
• Ion 4%