Investigations of high-performance GaAs solar cells grown on Ge-Si_1-xGe_x-Si substrates

Keyphrases

• High Performance 100%
• SiGe 100%
• Si Substrate 100%
• Si1-xGex 100%
• GaAs Solar Cell 100%
• Device Area 66%
• SiGe Virtual Substrate 66%
• Si Wafer 33%
• Solar Cell 33%
• Gallium Arsenide 33%
• Heteroepitaxial Structures 33%
• Open-circuit Voltage 33%
• Photovoltaic Devices 33%
• Device Performance 33%
• High Efficiency 33%
• Performance Characteristics 33%
• Solar Cell Performance 33%
• Ge Substrate 33%
• Homoepitaxial 33%
• Performance Measures 33%
• Carrier Recombination 33%
• Si-based 33%
• Performance Uniformity 33%
• Performance Variation 33%
• Recombination Losses 33%
• Area-efficient 33%
• Compositionally Graded 33%
• Gamma-ray Spectrum 33%
• Scaleable 33%
• III-V Photonics 33%
• High Open-circuit Voltage 33%
• Large-area Solar Cells 33%
• Threading Dislocation Density 33%

Engineering

• Gallium Arsenide 100%
• Si Substrate 100%
• Solar Cell 100%
• Open Circuit Voltage 33%
• Si Wafer 16%
• Photovoltaics 16%
• Device Performance 16%
• Performance Characteristic 16%
• Interlayer 16%
• Cell Performance 16%
• Dislocation Density 16%
• Threading Dislocation 16%
• Recombination Loss 16%
• Ge Substrate 16%