Investigation of product burn-in failures due to powered NPN bipolar latching of active MOSFET rail clamps

Scott Ruth, James W. Miller, Alex Gerdemann, Michael Stockinger, Melanie Etherton, Mohamed Moosa, Allan Dobbin, Robert Mertens, Kuo Hsuan Meng, Elyse Rosenbaum, Paolo Colombo, Martina Cordoni, Nicolas Guitard

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A product utilizing 5V RC clamps suffered EOS damage during BI due to marginal Vhold of the clamp NMOS. Powered TLP was used to mimic BI noise events and to explain clamp response across a range of starting V supply levels. Alternate clamp configurations were explored to improve Vhold.

Original languageEnglish (US)
Title of host publicationElectrical Overstress/Electrostatic Discharge Symposium Proceedings, EOS/ESD 2013
StatePublished - Oct 16 2013
Event2013 35th Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2013 - Las Vegas, NV, United States
Duration: Sep 8 2013Sep 13 2013

Publication series

NameElectrical Overstress/Electrostatic Discharge Symposium Proceedings
ISSN (Print)0739-5159

Other

Other2013 35th Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2013
CountryUnited States
CityLas Vegas, NV
Period9/8/139/13/13

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Investigation of product burn-in failures due to powered NPN bipolar latching of active MOSFET rail clamps'. Together they form a unique fingerprint.

  • Cite this

    Ruth, S., Miller, J. W., Gerdemann, A., Stockinger, M., Etherton, M., Moosa, M., Dobbin, A., Mertens, R., Meng, K. H., Rosenbaum, E., Colombo, P., Cordoni, M., & Guitard, N. (2013). Investigation of product burn-in failures due to powered NPN bipolar latching of active MOSFET rail clamps. In Electrical Overstress/Electrostatic Discharge Symposium Proceedings, EOS/ESD 2013 [6635940] (Electrical Overstress/Electrostatic Discharge Symposium Proceedings).