Investigation of impurities in type-II InAs/GaSb superlattices via capacitance-voltage measurement

G. Chen, A. M. Hoang, S. Bogdanov, A. Haddadi, P. R. Bijjam, B. M. Nguyen, M. Razeghi

Research output: Contribution to journalArticlepeer-review

Abstract

Capacitance-voltage measurement was utilized to characterize impurities in the non-intentionally doped region of Type-II InAs/GaSb superlattice p-i-n photodiodes. Ionized carrier concentration versus temperature dependence revealed the presence of a kind of defects with activation energy below 6 meV and a total concentration of low 1015 cm-3. Correlation between defect characteristics and superlattice designs was studied. The defects exhibited a p-type behavior with decreasing activation energy as the InAs thickness increased from 7 to 11 monolayers, while maintaining the GaSb thickness of 7 monolayers. With 13 monolayers of InAs, the superlattice became n-type and the activation energy deviated from the p-type trend.

Original languageEnglish (US)
Article number033512
JournalApplied Physics Letters
Volume103
Issue number3
DOIs
StatePublished - Jul 15 2013
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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