Investigation of hole and electron back injected tunneling currents in a poly-silicon emitter complementary bipolar technology

R. Bashir, F. Hebert, D. Basile, D. Su

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The effects of interfacial oxide on back injected tunneling base current in NPN and PNP transistors are investigated on the same wafer in a silicon complementary technology for the first time. Following the classic treatment of De Graaff and De Groot, electrical measurements were performed on devices with a thin oxide between the poly-crystalline and mono-crystalline regions of the emitter. TEM results show that a 22A interfacial oxide is present in the PNP device and 14A oxide in the NPN devices. Temperature measurements were performed to extract the tunneling probability of back injected holes, Ph, for the NPN and back injected electrons, Pe, for the PNP. It was found that the Pe∼ 5 Phand was independent of temperature.

Original languageEnglish (US)
Title of host publicationESSDERC 1996 - Proceedings of the 26th European Solid State Device Research Conference
EditorsMassimo Rudan, Giorgio Baccarani
PublisherIEEE Computer Society
Pages221-224
Number of pages4
ISBN (Electronic)286332196X
ISBN (Print)9782863321966
StatePublished - Jan 1 1996
Externally publishedYes
Event26th European Solid State Device Research Conference, ESSDERC 1996 - Bologna, Italy
Duration: Sep 9 1996Sep 11 1996

Publication series

NameEuropean Solid-State Device Research Conference
ISSN (Print)1930-8876

Other

Other26th European Solid State Device Research Conference, ESSDERC 1996
Country/TerritoryItaly
CityBologna
Period9/9/969/11/96

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

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