Investigation of hole and electron back injected tunneling currents in a poly-silicon emitter complementary bipolar technology

R. Bashir; F. Hebert; D. Basile; D. Su

Investigation of hole and electron back injected tunneling currents in a poly-silicon emitter complementary bipolar technology

R. Bashir, F. Hebert, D. Basile, D. Su

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The effects of interfacial oxide on back injected tunneling base current in NPN and PNP transistors are investigated on the same wafer in a silicon complementary technology for the first time. Following the classic treatment of De Graaff and De Groot, electrical measurements were performed on devices with a thin oxide between the poly-crystalline and mono-crystalline regions of the emitter. TEM results show that a 22A interfacial oxide is present in the PNP device and 14A oxide in the NPN devices. Temperature measurements were performed to extract the tunneling probability of back injected holes, P_h, for the NPN and back injected electrons, P_e, for the PNP. It was found that the P_e∼ 5 P_hand was independent of temperature.

Original language	English (US)
Title of host publication	ESSDERC 1996 - Proceedings of the 26th European Solid State Device Research Conference
Editors	Massimo Rudan, Giorgio Baccarani
Publisher	IEEE Computer Society
Pages	221-224
Number of pages	4
ISBN (Electronic)	286332196X
ISBN (Print)	9782863321966
State	Published - 1996
Externally published	Yes
Event	26th European Solid State Device Research Conference, ESSDERC 1996 - Bologna, Italy Duration: Sep 9 1996 → Sep 11 1996

Publication series

Name	European Solid-State Device Research Conference
ISSN (Print)	1930-8876

Other

Other	26th European Solid State Device Research Conference, ESSDERC 1996
Country/Territory	Italy
City	Bologna
Period	9/9/96 → 9/11/96

ASJC Scopus subject areas

Electrical and Electronic Engineering
Safety, Risk, Reliability and Quality

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Bashir, R., Hebert, F., Basile, D., & Su, D. (1996). Investigation of hole and electron back injected tunneling currents in a poly-silicon emitter complementary bipolar technology. In M. Rudan, & G. Baccarani (Eds.), ESSDERC 1996 - Proceedings of the 26th European Solid State Device Research Conference (pp. 221-224). Article 5435646 (European Solid-State Device Research Conference). IEEE Computer Society.

Investigation of hole and electron back injected tunneling currents in a poly-silicon emitter complementary bipolar technology. / Bashir, R.; Hebert, F.; Basile, D. et al.
ESSDERC 1996 - Proceedings of the 26th European Solid State Device Research Conference. ed. / Massimo Rudan; Giorgio Baccarani. IEEE Computer Society, 1996. p. 221-224 5435646 (European Solid-State Device Research Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Bashir, R, Hebert, F, Basile, D & Su, D 1996, Investigation of hole and electron back injected tunneling currents in a poly-silicon emitter complementary bipolar technology. in M Rudan & G Baccarani (eds), ESSDERC 1996 - Proceedings of the 26th European Solid State Device Research Conference., 5435646, European Solid-State Device Research Conference, IEEE Computer Society, pp. 221-224, 26th European Solid State Device Research Conference, ESSDERC 1996, Bologna, Italy, 9/9/96.

Bashir R, Hebert F, Basile D, Su D. Investigation of hole and electron back injected tunneling currents in a poly-silicon emitter complementary bipolar technology. In Rudan M, Baccarani G, editors, ESSDERC 1996 - Proceedings of the 26th European Solid State Device Research Conference. IEEE Computer Society. 1996. p. 221-224. 5435646. (European Solid-State Device Research Conference).

Bashir, R. ; Hebert, F. ; Basile, D. et al. / Investigation of hole and electron back injected tunneling currents in a poly-silicon emitter complementary bipolar technology. ESSDERC 1996 - Proceedings of the 26th European Solid State Device Research Conference. editor / Massimo Rudan ; Giorgio Baccarani. IEEE Computer Society, 1996. pp. 221-224 (European Solid-State Device Research Conference).

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title = "Investigation of hole and electron back injected tunneling currents in a poly-silicon emitter complementary bipolar technology",

abstract = "The effects of interfacial oxide on back injected tunneling base current in NPN and PNP transistors are investigated on the same wafer in a silicon complementary technology for the first time. Following the classic treatment of De Graaff and De Groot, electrical measurements were performed on devices with a thin oxide between the poly-crystalline and mono-crystalline regions of the emitter. TEM results show that a 22A interfacial oxide is present in the PNP device and 14A oxide in the NPN devices. Temperature measurements were performed to extract the tunneling probability of back injected holes, Ph, for the NPN and back injected electrons, Pe, for the PNP. It was found that the Pe∼ 5 Phand was independent of temperature.",

author = "R. Bashir and F. Hebert and D. Basile and D. Su",

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language = "English (US)",

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N2 - The effects of interfacial oxide on back injected tunneling base current in NPN and PNP transistors are investigated on the same wafer in a silicon complementary technology for the first time. Following the classic treatment of De Graaff and De Groot, electrical measurements were performed on devices with a thin oxide between the poly-crystalline and mono-crystalline regions of the emitter. TEM results show that a 22A interfacial oxide is present in the PNP device and 14A oxide in the NPN devices. Temperature measurements were performed to extract the tunneling probability of back injected holes, Ph, for the NPN and back injected electrons, Pe, for the PNP. It was found that the Pe∼ 5 Phand was independent of temperature.

AB - The effects of interfacial oxide on back injected tunneling base current in NPN and PNP transistors are investigated on the same wafer in a silicon complementary technology for the first time. Following the classic treatment of De Graaff and De Groot, electrical measurements were performed on devices with a thin oxide between the poly-crystalline and mono-crystalline regions of the emitter. TEM results show that a 22A interfacial oxide is present in the PNP device and 14A oxide in the NPN devices. Temperature measurements were performed to extract the tunneling probability of back injected holes, Ph, for the NPN and back injected electrons, Pe, for the PNP. It was found that the Pe∼ 5 Phand was independent of temperature.

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Investigation of hole and electron back injected tunneling currents in a poly-silicon emitter complementary bipolar technology

Abstract

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