@inproceedings{f67d4191dd4e4ef5a175efc37e716ebd,
title = "Investigation of hole and electron back injected tunneling currents in a poly-silicon emitter complementary bipolar technology",
abstract = "The effects of interfacial oxide on back injected tunneling base current in NPN and PNP transistors are investigated on the same wafer in a silicon complementary technology for the first time. Following the classic treatment of De Graaff and De Groot, electrical measurements were performed on devices with a thin oxide between the poly-crystalline and mono-crystalline regions of the emitter. TEM results show that a 22A interfacial oxide is present in the PNP device and 14A oxide in the NPN devices. Temperature measurements were performed to extract the tunneling probability of back injected holes, Ph, for the NPN and back injected electrons, Pe, for the PNP. It was found that the Pe∼ 5 Phand was independent of temperature.",
author = "R. Bashir and F. Hebert and D. Basile and D. Su",
year = "1996",
language = "English (US)",
isbn = "9782863321966",
series = "European Solid-State Device Research Conference",
publisher = "IEEE Computer Society",
pages = "221--224",
editor = "Massimo Rudan and Giorgio Baccarani",
booktitle = "ESSDERC 1996 - Proceedings of the 26th European Solid State Device Research Conference",
note = "26th European Solid State Device Research Conference, ESSDERC 1996 ; Conference date: 09-09-1996 Through 11-09-1996",
}