@inproceedings{95760ba426e447f4a19708316a2dd933,
title = "Investigation of base-collector parasitics for various emitter and base geometries in GaAsSb/InP type-II DHBTs",
abstract = "GaAsSb/InP type-II DHBT transistors have been fabricated using a number of different base geometries. The devices have been modeled and their small signal parasitic components have been extracted. This work will examine the effects of having a realigned base, then compare different geometries and show why the current power transistor design is not conducive towards high speed applications.",
keywords = "DHBT, GaAsSb, HBT, InP",
author = "Chu-Kung, {Benjamin F.} and Shen, {Shyh Chiang} and William Snodgrass and Milton Feng",
year = "2006",
language = "English (US)",
isbn = "1893580075",
series = "2006 International Conference on Compound Semiconductor Manufacturing Technology",
pages = "161--164",
booktitle = "2006 International Conference on Compound Semiconductor Manufacturing Technology",
note = "2006 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2006 ; Conference date: 24-04-2006 Through 27-04-2006",
}