Investigation of base-collector parasitics for various emitter and base geometries in GaAsSb/InP type-II DHBTs

Benjamin F. Chu-Kung, Shyh Chiang Shen, William Snodgrass, Milton Feng

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

GaAsSb/InP type-II DHBT transistors have been fabricated using a number of different base geometries. The devices have been modeled and their small signal parasitic components have been extracted. This work will examine the effects of having a realigned base, then compare different geometries and show why the current power transistor design is not conducive towards high speed applications.

Original languageEnglish (US)
Title of host publication2006 International Conference on Compound Semiconductor Manufacturing Technology
Pages161-164
Number of pages4
StatePublished - 2006
Event2006 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2006 - Vancouver, BC, Canada
Duration: Apr 24 2006Apr 27 2006

Publication series

Name2006 International Conference on Compound Semiconductor Manufacturing Technology

Other

Other2006 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2006
Country/TerritoryCanada
CityVancouver, BC
Period4/24/064/27/06

Keywords

  • DHBT
  • GaAsSb
  • HBT
  • InP

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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