TY - JOUR
T1 - Inversion-channel enhancement-mode GaAs MOSFETs with regrown source and drain contacts
AU - Liao, Chichih
AU - Cheng, Donald
AU - Cheng, Chienchia
AU - Cheng, K. Y.
AU - Feng, Milton
AU - Chiang, T. H.
AU - Kwo, J.
AU - Hong, M.
N1 - Funding Information:
The work is supported in part by the MARCO MSD Focus Center, one of five research centers funded under the Focus Center Research Program, a Semiconductor Research Corporation program. The authors also wish to thank Department of Natural Sciences at National Science Council under Grants of NSC-97-2120-M-007-008 and NSC-96-2628-M-007-003-MY3, Taiwan, Republic of China for supporting this work performed at National Tsing Hua University.
PY - 2009/3/15
Y1 - 2009/3/15
N2 - The use of compound semiconductors as the channel material has recently drawn great attention because of its potential to solve the upcoming Si metal-oxide-semiconductor field effect transistor (MOSFET) scaling problem for device beyond 22 nm node. In this work, a method of fabricating inversion-channel enhancement-mode GaAs n-MOSFET by incorporating molecular beam epitaxy regrown source and drain regions is demonstrated. By using regrown contact layers to avoid high-temperature processes and, thus, preserve the integrity of the oxide-semiconductor interface, the structure allows the fabrication of self-aligned III-V-based MOSFET. The fabricated n-channel enhancement-mode GaAs MOSFET with a 4 μm gate length shows a record high transconductance of 75 mS/mm.
AB - The use of compound semiconductors as the channel material has recently drawn great attention because of its potential to solve the upcoming Si metal-oxide-semiconductor field effect transistor (MOSFET) scaling problem for device beyond 22 nm node. In this work, a method of fabricating inversion-channel enhancement-mode GaAs n-MOSFET by incorporating molecular beam epitaxy regrown source and drain regions is demonstrated. By using regrown contact layers to avoid high-temperature processes and, thus, preserve the integrity of the oxide-semiconductor interface, the structure allows the fabrication of self-aligned III-V-based MOSFET. The fabricated n-channel enhancement-mode GaAs MOSFET with a 4 μm gate length shows a record high transconductance of 75 mS/mm.
KW - A3. Molecular beam epitaxy
KW - B1. Oxides
KW - B2. Semiconducting gallium arsenide
KW - B3. Field effect transistors
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U2 - 10.1016/j.jcrysgro.2008.11.064
DO - 10.1016/j.jcrysgro.2008.11.064
M3 - Article
AN - SCOPUS:63349104002
SN - 0022-0248
VL - 311
SP - 1958
EP - 1961
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 7
ER -