Inversion-channel enhancement-mode GaAs MOSFETs with regrown source and drain contacts

Chichih Liao, Donald Cheng, Chienchia Cheng, K. Y. Cheng, Milton Feng, T. H. Chiang, J. Kwo, M. Hong

Research output: Contribution to journalArticlepeer-review


The use of compound semiconductors as the channel material has recently drawn great attention because of its potential to solve the upcoming Si metal-oxide-semiconductor field effect transistor (MOSFET) scaling problem for device beyond 22 nm node. In this work, a method of fabricating inversion-channel enhancement-mode GaAs n-MOSFET by incorporating molecular beam epitaxy regrown source and drain regions is demonstrated. By using regrown contact layers to avoid high-temperature processes and, thus, preserve the integrity of the oxide-semiconductor interface, the structure allows the fabrication of self-aligned III-V-based MOSFET. The fabricated n-channel enhancement-mode GaAs MOSFET with a 4 μm gate length shows a record high transconductance of 75 mS/mm.

Original languageEnglish (US)
Pages (from-to)1958-1961
Number of pages4
JournalJournal of Crystal Growth
Issue number7
StatePublished - Mar 15 2009


  • A3. Molecular beam epitaxy
  • B1. Oxides
  • B2. Semiconducting gallium arsenide
  • B3. Field effect transistors

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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