Inverse metal-assisted chemical etching produces smooth high aspect ratio InP nanostructures

Seung Hyun Kim, Parsian K. Mohseni, Yi Song, Tatsumi Ishihara, Xiuling Li

Research output: Contribution to journalArticlepeer-review


Creating high aspect ratio (AR) nanostructures by top-down fabrication without surface damage remains challenging for III-V semiconductors. Here, we demonstrate uniform, array-based InP nanostructures with lateral dimensions as small as sub-20 nm and AR > 35 using inverse metal-assisted chemical etching (I-MacEtch) in hydrogen peroxide (H2O2) and sulfuric acid (H2SO4), a purely solution-based yet anisotropic etching method. The mechanism of I-MacEtch, in contrast to regular MacEtch, is explored through surface characterization. Unique to I-MacEtch, the sidewall etching profile is remarkably smooth, independent of metal pattern edge roughness. The capability of this simple method to create various InP nanostructures, including high AR fins, can potentially enable the aggressive scaling of InP based transistors and optoelectronic devices with better performance and at lower cost than conventional etching methods.

Original languageEnglish (US)
Pages (from-to)641-648
Number of pages8
JournalNano letters
Issue number1
StatePublished - Jan 14 2015


  • I-MacEtch
  • InP
  • MACE
  • MacEtch
  • finFET
  • inverse MacEtch
  • metal-assisted chemical etching
  • nanowires

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering


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