Inverse-extraordianry optoconductance in Ti/Au/GaAs hybrid structures

A. K M Newaz, W. J. Chang, K. D. Wallace, S. A. Wickline, R. Bashir, A. M. Gilbertson, L. F. Cohen, L. C. Edge, S. A. Solin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report here the observation of inverse extraordinary optoconductance (I-EOC) in a Ti-GaAs metal-semiconductor hybrid (MSH) structure where the photoconductance of the device decreases as the light intensity increases. The artificially designed MSH structure of Ti forming a Schottky interface with GaAs shows efficient photon sensing not exhibited by bare semiconductors and shows promising potential for several nanophotonic applications.

Original languageEnglish (US)
Title of host publicationPhysics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30
Pages973-974
Number of pages2
DOIs
StatePublished - Dec 1 2011
Event30th International Conference on the Physics of Semiconductors, ICPS-30 - Seoul, Korea, Republic of
Duration: Jul 25 2010Jul 30 2010

Publication series

NameAIP Conference Proceedings
Volume1399
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

Other30th International Conference on the Physics of Semiconductors, ICPS-30
CountryKorea, Republic of
CitySeoul
Period7/25/107/30/10

Keywords

  • EOC
  • photoconductance
  • Schottky
  • shunt

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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