Inverse-extraordianry optoconductance in Ti/Au/GaAs hybrid structures

A. K M Newaz, W. J. Chang, K. D. Wallace, S. A. Wickline, R. Bashir, A. M. Gilbertson, L. F. Cohen, L. C. Edge, S. A. Solin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report here the observation of inverse extraordinary optoconductance (I-EOC) in a Ti-GaAs metal-semiconductor hybrid (MSH) structure where the photoconductance of the device decreases as the light intensity increases. The artificially designed MSH structure of Ti forming a Schottky interface with GaAs shows efficient photon sensing not exhibited by bare semiconductors and shows promising potential for several nanophotonic applications.

Original languageEnglish (US)
Title of host publicationPhysics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30
Pages973-974
Number of pages2
DOIs
StatePublished - Dec 1 2011
Event30th International Conference on the Physics of Semiconductors, ICPS-30 - Seoul, Korea, Republic of
Duration: Jul 25 2010Jul 30 2010

Publication series

NameAIP Conference Proceedings
Volume1399
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

Other30th International Conference on the Physics of Semiconductors, ICPS-30
CountryKorea, Republic of
CitySeoul
Period7/25/107/30/10

Fingerprint

hybrid structures
metals
luminous intensity
photons

Keywords

  • EOC
  • photoconductance
  • Schottky
  • shunt

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Newaz, A. K. M., Chang, W. J., Wallace, K. D., Wickline, S. A., Bashir, R., Gilbertson, A. M., ... Solin, S. A. (2011). Inverse-extraordianry optoconductance in Ti/Au/GaAs hybrid structures. In Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30 (pp. 973-974). (AIP Conference Proceedings; Vol. 1399). https://doi.org/10.1063/1.3666702

Inverse-extraordianry optoconductance in Ti/Au/GaAs hybrid structures. / Newaz, A. K M; Chang, W. J.; Wallace, K. D.; Wickline, S. A.; Bashir, R.; Gilbertson, A. M.; Cohen, L. F.; Edge, L. C.; Solin, S. A.

Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30. 2011. p. 973-974 (AIP Conference Proceedings; Vol. 1399).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Newaz, AKM, Chang, WJ, Wallace, KD, Wickline, SA, Bashir, R, Gilbertson, AM, Cohen, LF, Edge, LC & Solin, SA 2011, Inverse-extraordianry optoconductance in Ti/Au/GaAs hybrid structures. in Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30. AIP Conference Proceedings, vol. 1399, pp. 973-974, 30th International Conference on the Physics of Semiconductors, ICPS-30, Seoul, Korea, Republic of, 7/25/10. https://doi.org/10.1063/1.3666702
Newaz AKM, Chang WJ, Wallace KD, Wickline SA, Bashir R, Gilbertson AM et al. Inverse-extraordianry optoconductance in Ti/Au/GaAs hybrid structures. In Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30. 2011. p. 973-974. (AIP Conference Proceedings). https://doi.org/10.1063/1.3666702
Newaz, A. K M ; Chang, W. J. ; Wallace, K. D. ; Wickline, S. A. ; Bashir, R. ; Gilbertson, A. M. ; Cohen, L. F. ; Edge, L. C. ; Solin, S. A. / Inverse-extraordianry optoconductance in Ti/Au/GaAs hybrid structures. Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30. 2011. pp. 973-974 (AIP Conference Proceedings).
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