Holes can be readily doped into small-gap semiconductors such as Si or GaAs, but corresponding p-type doping in wide-gap insulators, while maintaining transparency, has proven difficult. Here, by utilizing design principles distilled from theory with systematic measurements in the prototype A 2BO4 spinel Co2ZnO4, we formulate and test practical design rules for effective hole doping. Using these, we demonstrate a 20-fold increase in the hole density in Co2ZnO 4 due to extrinsic (Mg) doping and, ultimately, a factor of 104 increase for the inverse spinel Co2NiO4, the x = 1 end point of Ni-doped Co2Zn1-xNixO4.
|Original language||English (US)|
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|State||Published - Nov 14 2011|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics