Inverse design approach to hole doping in ternary oxides: Enhancing p-type conductivity in cobalt oxide spinels

J. D. Perkins, T. R. Paudel, A. Zakutayev, P. F. Ndione, P. A. Parilla, D. L. Young, S. Lany, D. S. Ginley, A. Zunger, N. H. Perry, Y. Tang, M. Grayson, T. O. Mason, J. S. Bettinger, Y. Shi, M. F. Toney

Research output: Contribution to journalArticle

Abstract

Holes can be readily doped into small-gap semiconductors such as Si or GaAs, but corresponding p-type doping in wide-gap insulators, while maintaining transparency, has proven difficult. Here, by utilizing design principles distilled from theory with systematic measurements in the prototype A 2BO4 spinel Co2ZnO4, we formulate and test practical design rules for effective hole doping. Using these, we demonstrate a 20-fold increase in the hole density in Co2ZnO 4 due to extrinsic (Mg) doping and, ultimately, a factor of 104 increase for the inverse spinel Co2NiO4, the x = 1 end point of Ni-doped Co2Zn1-xNixO4.

Original languageEnglish (US)
Article number205207
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume84
Issue number20
DOIs
StatePublished - Nov 14 2011
Externally publishedYes

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Perkins, J. D., Paudel, T. R., Zakutayev, A., Ndione, P. F., Parilla, P. A., Young, D. L., Lany, S., Ginley, D. S., Zunger, A., Perry, N. H., Tang, Y., Grayson, M., Mason, T. O., Bettinger, J. S., Shi, Y., & Toney, M. F. (2011). Inverse design approach to hole doping in ternary oxides: Enhancing p-type conductivity in cobalt oxide spinels. Physical Review B - Condensed Matter and Materials Physics, 84(20), [205207]. https://doi.org/10.1103/PhysRevB.84.205207