Intraband relaxation in CdSe quantum dots

Philippe Guyot-Sionnest, Moonsub Shim, Chris Matranga, Margaret Hines

Research output: Contribution to journalArticle

Abstract

The relaxation of the 1P to 1S electronic states of CdSe semiconductor nanocrystals is followed by infrared pump-probe spectroscopy. Fast (1 ps) and slow (>200 ps) components are observed. Using different capping molecules to control the hole states, we show how the intraband relaxation slows down as the hole is in a shallow trap, a deep trap, or a charge-separated complex, providing strong support for an electron-hole Auger coupling. The slow component corresponds to an energy relaxation rate orders of magnitude slower than in bulk systems. It may be the first indication of the phonon bottleneck effect long expected in strongly confined quantum dots.

Original languageEnglish (US)
Pages (from-to)R2181-R2184
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume60
Issue number4
DOIs
StatePublished - Jan 1 1999
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Intraband relaxation in CdSe quantum dots'. Together they form a unique fingerprint.

  • Cite this