We investigate intraband transitions in SiSi O2 quantum dots (QD's) by using a tridimensional quantum mechanical model that takes into account the six-valley structure of silicon. The interplay between QD orientation and shape strongly affects the infrared absorption spectra of Si QD's. In particular, we show the orientation of the Si valleys dramatically changes the optical properties of Si QD's.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)