Intraband absorption in silicon nanocrystals: The combined effect of shape and crystal orientation

J. S. De Sousa, J. P. Leburton, V. N. Freire, E. F. Da Silva

Research output: Contribution to journalArticlepeer-review

Abstract

We investigate intraband transitions in SiSi O2 quantum dots (QD's) by using a tridimensional quantum mechanical model that takes into account the six-valley structure of silicon. The interplay between QD orientation and shape strongly affects the infrared absorption spectra of Si QD's. In particular, we show the orientation of the Si valleys dramatically changes the optical properties of Si QD's.

Original languageEnglish (US)
Article number031913
JournalApplied Physics Letters
Volume87
Issue number3
DOIs
StatePublished - Jul 18 2005

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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