Intervalley shunting of electrons in modulation-doped multiple-quantum-well structures

J. L. Educato, J. P. Leburton, Jin Wang, D. W. Bailey

Research output: Contribution to journalArticlepeer-review

Abstract

The dynamics of intersubband transitions in modulation-doped multiple narrow GaAs-AlxGa1-xAs quantum-well structures is investigated with Monte Carlo simulations. Two quantized polar-optical-phonon approaches are considered, slab modes and guided modes, in addition to interface modes and intervalley optical-deformation-potential scattering. We demonstrate that the nature of polar modes is of secondary importance for interpreting the experimental time constants, and that L intervalley scattering has the most significant effect on carrier relaxation.

Original languageEnglish (US)
Pages (from-to)8365-8368
Number of pages4
JournalPhysical Review B
Volume44
Issue number15
DOIs
StatePublished - 1991

ASJC Scopus subject areas

  • Condensed Matter Physics

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