TY - JOUR
T1 - Intervalence plasmons in boron-doped diamond
AU - Bhattacharya, Souvik
AU - Boyd, Jonathan
AU - Reichardt, Sven
AU - Allard, Valentin
AU - Talebi, Amir Hossein
AU - Maccaferri, Nicolò
AU - Shenderova, Olga
AU - Lereu, Aude L.
AU - Wirtz, Ludger
AU - Strangi, Giuseppe
AU - Sankaran, R. Mohan
N1 - This material is based upon work supported by the National Science Foundation (NSF) under Grant No. DMR-1708742. S.R. and L.W. acknowledge funding by the FNR (Fond National de la Recherche, Luxembourg) through project C22/MS/17415967/ExcPhon. N.M. acknowledges support from the Swedish Research Council (Grant No. 2021-05784), Kempestiftelserna (Grant No. JCK\u22123122), the Knut and Alice Wallenberg Foundation through the Wallenberg Academy Fellows Programme (Grant No. 2023.0089), the Wenner-Gren Foundations (Grant No. UPD2022-0074), and the European Innovation Council (Grant No. 101046920). Electron microscopy was performed at the Center for Electron Microscopy and Analysis (CEMAS) at The Ohio State University and the authors thank Prof. David McComb and Dr. Robert Williams for helpful discussions and their technical help. Micro Raman spectroscopy, TERS, PiFM, and s-SNOM were carried out at the Materials Research Laboratory Central Research Facilities at the University of Illinois Urbana-Champaign, which is partially supported by NSF through a Materials Research Science and Engineering Center under Grant No. DMR-2309037. The authors would also like to thank Prof. S.I. Bogdanov for insightful discussions.
This material is based upon work supported by the National Science Foundation (NSF) under Grant No. DMR-1708742. S.R. and L.W. acknowledge funding by the FNR (Fond National de la Recherche, Luxembourg) through project C22/MS/17415967/ExcPhon.\u00A0N.M. acknowledges support from the Swedish Research Council (Grant No. 2021-05784), Kempestiftelserna (Grant No. JCK\u22123122), the Knut and Alice Wallenberg Foundation\u00A0through the Wallenberg Academy Fellows Programme (Grant No. 2023.0089), the Wenner-Gren Foundations (Grant No. UPD2022-0074), and the European Innovation Council (Grant No. 101046920). Electron microscopy was performed at the Center for Electron Microscopy and Analysis (CEMAS) at The Ohio State University and the authors thank Prof. David McComb and Dr. Robert Williams for helpful discussions and their technical help. Micro Raman spectroscopy, TERS, PiFM, and s-SNOM were carried out at the Materials Research Laboratory Central Research Facilities at the University of Illinois Urbana-Champaign, which is partially supported by NSF through a Materials Research Science and Engineering Center under Grant No. DMR-2309037. The authors would also like to thank Prof. S.I. Bogdanov for insightful discussions.
PY - 2025/1/14
Y1 - 2025/1/14
N2 - Doped semiconductors can exhibit metallic-like properties ranging from superconductivity to tunable localized surface plasmon resonances. Diamond is a wide-bandgap semiconductor that is rendered electronically active by incorporating a hole dopant, boron. While the effects of boron doping on the electronic band structure of diamond are well-studied, any link between charge carriers and plasmons has never been shown. Here, we report intervalence plasmons in boron-doped diamond, defined as collective electronic excitations between the valence subbands, opened up by the presence of holes. Evidence for these low-energy excitations is provided by valence electron energy loss spectroscopy and near-field infrared spectroscopy. The measured spectra are subsequently reproduced by first-principles calculations based on the contribution of intervalence band transitions to the dielectric function. Our calculations also reveal that the real part of the dielectric function exhibits a crossover characteristic of metallicity. These results suggest a new mechanism for inducing plasmon-like behavior in doped semiconductors, and the possibility of attaining such properties in diamond, a key emerging material for quantum information technologies.
AB - Doped semiconductors can exhibit metallic-like properties ranging from superconductivity to tunable localized surface plasmon resonances. Diamond is a wide-bandgap semiconductor that is rendered electronically active by incorporating a hole dopant, boron. While the effects of boron doping on the electronic band structure of diamond are well-studied, any link between charge carriers and plasmons has never been shown. Here, we report intervalence plasmons in boron-doped diamond, defined as collective electronic excitations between the valence subbands, opened up by the presence of holes. Evidence for these low-energy excitations is provided by valence electron energy loss spectroscopy and near-field infrared spectroscopy. The measured spectra are subsequently reproduced by first-principles calculations based on the contribution of intervalence band transitions to the dielectric function. Our calculations also reveal that the real part of the dielectric function exhibits a crossover characteristic of metallicity. These results suggest a new mechanism for inducing plasmon-like behavior in doped semiconductors, and the possibility of attaining such properties in diamond, a key emerging material for quantum information technologies.
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U2 - 10.1038/s41467-024-55353-0
DO - 10.1038/s41467-024-55353-0
M3 - Article
C2 - 39809753
AN - SCOPUS:85215760132
SN - 2041-1723
VL - 16
JO - Nature communications
JF - Nature communications
IS - 1
M1 - 444
ER -