Intersubband relaxation in modulation-doped multiple-quantum-well structures

J. L. Educato, J. P. Leburton

Research output: Contribution to journalArticle

Abstract

Photoexcited carrier behavior in modulation-doped multiple narrow GaAs-AlxGa1-xAs quantum-well structures which vary in quantum-well width and doping concentration is investigated with Monte Carlo simulations. The model includes scattering of Γ-valley subband electrons by confined slab and interface-polar-optical phonons and between Γ-valley and L-valley electrons via optical-deformation-potential phonons. The model closely predicts time constants for electron relaxation found experimentally and shows that the effect of including the L-valley transitions in the Monte Carlo simulation is essential.

Original languageEnglish (US)
Pages (from-to)2177-2180
Number of pages4
JournalPhysical Review B
Volume49
Issue number3
DOIs
StatePublished - Jan 1 1994

ASJC Scopus subject areas

  • Condensed Matter Physics

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