Abstract
Photoexcited carrier behavior in modulation-doped multiple narrow GaAs-AlxGa1-xAs quantum-well structures which vary in quantum-well width and doping concentration is investigated with Monte Carlo simulations. The model includes scattering of Γ-valley subband electrons by confined slab and interface-polar-optical phonons and between Γ-valley and L-valley electrons via optical-deformation-potential phonons. The model closely predicts time constants for electron relaxation found experimentally and shows that the effect of including the L-valley transitions in the Monte Carlo simulation is essential.
Original language | English (US) |
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Pages (from-to) | 2177-2180 |
Number of pages | 4 |
Journal | Physical Review B |
Volume | 49 |
Issue number | 3 |
DOIs | |
State | Published - 1994 |
ASJC Scopus subject areas
- Condensed Matter Physics