Intersubband mid-infrared emission in optically pumped quantum wells

F. H. Julien; Z. Moussa; P. Boucaud; Y. Lavon; A. Sa'ar; J. Wang; J. P. Leburton; V. Berger; J. Nagle; R. Planel

doi:10.1006/spmi.1996.0010

Intersubband mid-infrared emission in optically pumped quantum wells

F. H. Julien, Z. Moussa, P. Boucaud, Y. Lavon, A. Sa'ar, J. Wang, J. P. Leburton, V. Berger, J. Nagle, R. Planel

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Abstract

Optical emission between excited subbands of asymmetric coupled GaAs/AlGaAs quantum wells is investigated. The structures are designed to present an energy separation between the ground subband and the first excited subband close to the LO-phonon energy in order to enhance the non-radiative relaxation between those states. Optical pumping at 10 μm is used to excite electrons in the third subband. A mid-infrared emission at 14 μm is shown to take place between the third and second subbands. The spontaneous emission is observed up to room temperature. The radiative efficiency is ≈60 nW/W in lightly doped samples. We also predict that this situation is very effective for achieving almost complete population inversion as well as large stimulated gains. The possibility of mid-infrared intersubband emission under band-to-band optical pumping is also discussed.

Original language	English (US)
Pages (from-to)	69-79
Number of pages	11
Journal	Superlattices and Microstructures
Volume	19
Issue number	1
DOIs	https://doi.org/10.1006/spmi.1996.0010
State	Published - Jan 1996

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1006/spmi.1996.0010

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@article{f16ec3bb6f584c418a43c87ed52585a3,

title = "Intersubband mid-infrared emission in optically pumped quantum wells",

abstract = "Optical emission between excited subbands of asymmetric coupled GaAs/AlGaAs quantum wells is investigated. The structures are designed to present an energy separation between the ground subband and the first excited subband close to the LO-phonon energy in order to enhance the non-radiative relaxation between those states. Optical pumping at 10 μm is used to excite electrons in the third subband. A mid-infrared emission at 14 μm is shown to take place between the third and second subbands. The spontaneous emission is observed up to room temperature. The radiative efficiency is ≈60 nW/W in lightly doped samples. We also predict that this situation is very effective for achieving almost complete population inversion as well as large stimulated gains. The possibility of mid-infrared intersubband emission under band-to-band optical pumping is also discussed.",

author = "Julien, {F. H.} and Z. Moussa and P. Boucaud and Y. Lavon and A. Sa'ar and J. Wang and Leburton, {J. P.} and V. Berger and J. Nagle and R. Planel",

note = "Funding Information: Acknowledgements—This work was supported in part by EC program d CI1*-CT93-0072. J.W. and J.-P.L. acknowledge funding by Engineering Research Center for Compound Semiconductor Electronics through Grant d NSF EEC 89-43166.",

year = "1996",

month = jan,

doi = "10.1006/spmi.1996.0010",

language = "English (US)",

volume = "19",

pages = "69--79",

journal = "Superlattices and Microstructures",

issn = "0749-6036",

publisher = "Academic Press Inc.",

number = "1",

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TY - JOUR

T1 - Intersubband mid-infrared emission in optically pumped quantum wells

AU - Julien, F. H.

AU - Moussa, Z.

AU - Boucaud, P.

AU - Lavon, Y.

AU - Sa'ar, A.

AU - Wang, J.

AU - Leburton, J. P.

AU - Berger, V.

AU - Nagle, J.

AU - Planel, R.

N1 - Funding Information: Acknowledgements—This work was supported in part by EC program d CI1*-CT93-0072. J.W. and J.-P.L. acknowledge funding by Engineering Research Center for Compound Semiconductor Electronics through Grant d NSF EEC 89-43166.

PY - 1996/1

Y1 - 1996/1

N2 - Optical emission between excited subbands of asymmetric coupled GaAs/AlGaAs quantum wells is investigated. The structures are designed to present an energy separation between the ground subband and the first excited subband close to the LO-phonon energy in order to enhance the non-radiative relaxation between those states. Optical pumping at 10 μm is used to excite electrons in the third subband. A mid-infrared emission at 14 μm is shown to take place between the third and second subbands. The spontaneous emission is observed up to room temperature. The radiative efficiency is ≈60 nW/W in lightly doped samples. We also predict that this situation is very effective for achieving almost complete population inversion as well as large stimulated gains. The possibility of mid-infrared intersubband emission under band-to-band optical pumping is also discussed.

AB - Optical emission between excited subbands of asymmetric coupled GaAs/AlGaAs quantum wells is investigated. The structures are designed to present an energy separation between the ground subband and the first excited subband close to the LO-phonon energy in order to enhance the non-radiative relaxation between those states. Optical pumping at 10 μm is used to excite electrons in the third subband. A mid-infrared emission at 14 μm is shown to take place between the third and second subbands. The spontaneous emission is observed up to room temperature. The radiative efficiency is ≈60 nW/W in lightly doped samples. We also predict that this situation is very effective for achieving almost complete population inversion as well as large stimulated gains. The possibility of mid-infrared intersubband emission under band-to-band optical pumping is also discussed.

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UR - http://www.scopus.com/inward/citedby.url?scp=0029734271&partnerID=8YFLogxK

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DO - 10.1006/spmi.1996.0010

M3 - Article

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SN - 0749-6036

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EP - 79

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

IS - 1

ER -

Intersubband mid-infrared emission in optically pumped quantum wells

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