Intersubband dynamics in modulation doped quantum wells

J. L. Educato, D. W. Bailey, A. Sugg, K. Hess, J. P. Leburton

Research output: Contribution to journalArticlepeer-review


A theoretical investigation of the dynamics of intersubband transitions in modulation doped multiple narrow GaAs / AlxGa1-xAs quantum well structures by emission of GaAs (well) and AlxGa1-xAs (barrier) slab and interface mode polar optical phonons is presented. Photo-excited carrier behavior is interpreted via Monte Carlo simulations which predict long time constants for electron relaxation.

Original languageEnglish (US)
Pages (from-to)1615-1619
Number of pages5
JournalSolid State Electronics
Issue number12
StatePublished - Dec 1989


  • interface mode polar optical phonons
  • intersubband relaxation
  • Modulation doped multiple quantum wells
  • Monte Carlo simulation
  • photo-excited carriers
  • slab mode polar optical phonons
  • time constants

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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