Intersubband dynamics in modulation doped quantum wells

J. L. Educato; D. W. Bailey; A. Sugg; K. Hess; J. P. Leburton

doi:10.1016/0038-1101(89)90283-9

Intersubband dynamics in modulation doped quantum wells

J. L. Educato, D. W. Bailey, A. Sugg, K. Hess, J. P. Leburton

Research output: Contribution to journal › Article › peer-review

Abstract

A theoretical investigation of the dynamics of intersubband transitions in modulation doped multiple narrow GaAs / Al_xGa_1-xAs quantum well structures by emission of GaAs (well) and Al_xGa_1-xAs (barrier) slab and interface mode polar optical phonons is presented. Photo-excited carrier behavior is interpreted via Monte Carlo simulations which predict long time constants for electron relaxation.

Original language	English (US)
Pages (from-to)	1615-1619
Number of pages	5
Journal	Solid State Electronics
Volume	32
Issue number	12
DOIs	https://doi.org/10.1016/0038-1101(89)90283-9
State	Published - Dec 1989

Keywords

interface mode polar optical phonons
intersubband relaxation
Modulation doped multiple quantum wells
Monte Carlo simulation
photo-excited carriers
slab mode polar optical phonons
time constants

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1016/0038-1101(89)90283-9

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title = "Intersubband dynamics in modulation doped quantum wells",

abstract = "A theoretical investigation of the dynamics of intersubband transitions in modulation doped multiple narrow GaAs / AlxGa1-xAs quantum well structures by emission of GaAs (well) and AlxGa1-xAs (barrier) slab and interface mode polar optical phonons is presented. Photo-excited carrier behavior is interpreted via Monte Carlo simulations which predict long time constants for electron relaxation.",

keywords = "interface mode polar optical phonons, intersubband relaxation, Modulation doped multiple quantum wells, Monte Carlo simulation, photo-excited carriers, slab mode polar optical phonons, time constants",

author = "Educato, {J. L.} and Bailey, {D. W.} and A. Sugg and K. Hess and Leburton, {J. P.}",

note = "Funding Information: One of us (JLE) would like to expressh is gratitudeto the Amoco Foundationfo r its supporta nd to J. Wang for his thoughtfual ssistanceT. his work is fundedi n part by the EngineeringR esearchC enterf or Compound SemiconductoErl ectronicst hroughG rantNo. NSF ECD 89-43166( JPL, AS) and by the Office of Naval Researchth roughG rantNo. N00014-86-K-051(2D WB, KH). Finally, the work and interesot f Dr. A. Seilmieris mostv ital.",

year = "1989",

month = dec,

doi = "10.1016/0038-1101(89)90283-9",

language = "English (US)",

volume = "32",

pages = "1615--1619",

journal = "Solid State Electronics",

issn = "0038-1101",

publisher = "Elsevier Limited",

number = "12",

}

TY - JOUR

T1 - Intersubband dynamics in modulation doped quantum wells

AU - Educato, J. L.

AU - Bailey, D. W.

AU - Sugg, A.

AU - Hess, K.

AU - Leburton, J. P.

N1 - Funding Information: One of us (JLE) would like to expressh is gratitudeto the Amoco Foundationfo r its supporta nd to J. Wang for his thoughtfual ssistanceT. his work is fundedi n part by the EngineeringR esearchC enterf or Compound SemiconductoErl ectronicst hroughG rantNo. NSF ECD 89-43166( JPL, AS) and by the Office of Naval Researchth roughG rantNo. N00014-86-K-051(2D WB, KH). Finally, the work and interesot f Dr. A. Seilmieris mostv ital.

PY - 1989/12

Y1 - 1989/12

N2 - A theoretical investigation of the dynamics of intersubband transitions in modulation doped multiple narrow GaAs / AlxGa1-xAs quantum well structures by emission of GaAs (well) and AlxGa1-xAs (barrier) slab and interface mode polar optical phonons is presented. Photo-excited carrier behavior is interpreted via Monte Carlo simulations which predict long time constants for electron relaxation.

AB - A theoretical investigation of the dynamics of intersubband transitions in modulation doped multiple narrow GaAs / AlxGa1-xAs quantum well structures by emission of GaAs (well) and AlxGa1-xAs (barrier) slab and interface mode polar optical phonons is presented. Photo-excited carrier behavior is interpreted via Monte Carlo simulations which predict long time constants for electron relaxation.

KW - interface mode polar optical phonons

KW - intersubband relaxation

KW - Modulation doped multiple quantum wells

KW - Monte Carlo simulation

KW - photo-excited carriers

KW - slab mode polar optical phonons

KW - time constants

UR - http://www.scopus.com/inward/record.url?scp=0024888496&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0024888496&partnerID=8YFLogxK

U2 - 10.1016/0038-1101(89)90283-9

DO - 10.1016/0038-1101(89)90283-9

M3 - Article

AN - SCOPUS:0024888496

SN - 0038-1101

VL - 32

SP - 1615

EP - 1619

JO - Solid State Electronics

JF - Solid State Electronics

IS - 12

ER -

Intersubband dynamics in modulation doped quantum wells

Abstract

Keywords

ASJC Scopus subject areas

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