Interstitial precursor to silicide formation on Si(111)-(7×7)

P. A. Bennett, David G. Cahill, M. Copel

Research output: Contribution to journalArticlepeer-review


We show that cobalt atoms deposited on Si(111)-(7×7) at room temperature occupy near-surface interstitial sites of the silicon lattice at very low coverages. These sites are visible in scanning tunneling microscopy images as slightly lowered groups of 2 or 3 adjacent Si adatoms in an otherwise intact Si(111)-(7×7) surface. At 150°C the interstitials are mobile and preferentially occupy sites directly under 3-coordinated silicon surface atoms ("rest atoms") on the faulted side of the 7×7 unit cell. An atom-displacing suicide reaction occurs only for higher coverages, when 7×7 half-unit cells become multipy occupied.

Original languageEnglish (US)
Pages (from-to)452-455
Number of pages4
JournalPhysical review letters
Issue number3
StatePublished - 1994

ASJC Scopus subject areas

  • General Physics and Astronomy


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