Interplay between the electrical and thermal transport of silicon nanoscale MOSFETs

Mohamed Mohamed, Zlatan Aksamija, Wolfgang Vitale, Fawad Hassan, Umberto Ravaioli

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this report we introduce our newly developed 3D full-band particle Monte Carlo (MOCA3D) simulator with full electron and phonon dispersion and use it to investigate the electro-thermal behavior of Silicon-on-Insulator n-channel MOSFET.

Original languageEnglish (US)
Title of host publicationInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2012 Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages372-375
Number of pages4
ISBN (Electronic)9780615717562
StatePublished - 2012
Externally publishedYes
Event2012 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2012 - Denver, United States
Duration: Sep 5 2012Sep 7 2012

Publication series

NameInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Conference

Conference2012 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2012
CountryUnited States
CityDenver
Period9/5/129/7/12

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Computer Science Applications
  • Modeling and Simulation

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