Interlayer transport in disordered semiconductor electron bilayers

Y. Kim, B. Dellabetta, M. J. Gilbert

Research output: Contribution to journalArticlepeer-review

Abstract

We study the effects of disorder on the interlayer transport properties of disordered semiconductor bilayers by performing self-consistent quantum transport calculations. We find that the addition of material disorder to the system affects the interlayer interactions leading to significant deviations in the interlayer transfer characteristics. In particular, we find that disorder decreases and broadens the tunneling peak, effectively reducing the interacting system to a non-interacting system. Our results suggest that the experimental observation of exchange-enhanced interlayer transport in semiconductor bilayers requires materials with mean free paths larger than the spatial extent of the system.

Original languageEnglish (US)
Article number355301
JournalJournal of Physics Condensed Matter
Volume24
Issue number35
DOIs
StatePublished - Sep 5 2012

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics

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