Interlayer and interfacial exchange coupling in ferromagnetic metal/semiconductor heterostructures

M. J. Wilson, M. Zhu, R. C. Myers, D. D. Awschalom, P. Schiffer, N. Samarth

Research output: Contribution to journalArticle

Abstract

We describe a systematic study of the exchange coupling between a magnetically hard metallic ferromagnet (MnAs) and a magnetically soft ferromagnetic semiconductor (Ga1-x Mnx As) in bilayer and trilayer heterostructures. An exchange spring model of MnAs/ Ga1-x Mnx As bilayers accounts for the variation in the exchange-bias field with layer thickness and composition. We also present evidence for hole-mediated interlayer exchange coupling in MnAs/p-GaAs/ Ga1-x Mnx As trilayers and study the dependence of the exchange-bias field on the thickness of the spacer layer.

Original languageEnglish (US)
Article number045319
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume81
Issue number4
DOIs
StatePublished - Jan 25 2010

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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