Abstract
The effect of interfacial reactions between a Pt(7 nm)/Pd(7 nm)/Au(15 nm) layer and p-GaN on the ohmic properties of the contact was investigated using Auger electron spectroscopy (AES), x-ray photoelectron spectroscopy (XPS), and glancing angle x-ray diffraction. The annealed Pt/Pd/Au contact exhibited linear-current voltage characteristics, which indicated that a high-quality ohmic contact was formed. The Pt/Pd/Au contact exhibited a specific contact resistivity of 3.1 × 10 -5 ω cm 2 when annealed at 600°C for two minutes in flowing N 2 atmosphere. It was found that the diffusion of Pt and Pd into the GaN surface region plays an important role in forming a low resistance ohmic contact.
Original language | English (US) |
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Pages (from-to) | 1101-1104 |
Number of pages | 4 |
Journal | Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films |
Volume | 22 |
Issue number | 4 |
DOIs | |
State | Published - Jul 2004 |
Externally published | Yes |
ASJC Scopus subject areas
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films