Interfacial chemistry in a ZnTe/CdSe superlattice studied by atom probe tomography and transmission electron microscopy strain measurements

B. Bonef; B. Haas; J. L. Rouvière; R. André; C. Bougerol; A. Grenier; P. H. Jouneau; J. M. Zuo

doi:10.1111/jmi.12340

Interfacial chemistry in a ZnTe/CdSe superlattice studied by atom probe tomography and transmission electron microscopy strain measurements

B. Bonef, B. Haas, J. L. Rouvière, R. André, C. Bougerol, A. Grenier, P. H. Jouneau, J. M. Zuo

Research output: Contribution to journal › Article › peer-review

Abstract

The atomic scale analysis of a ZnTe/CdSe superlattice grown by molecular beam epitaxy is reported using atom probe tomography and strain measurements from high-resolution scanning transmission electron microscopy images. CdTe interfaces were grown by atomic layer epitaxy to prevent the spontaneous formation of ZnSe bonds. Both interfaces between ZnTe and CdSe are composed of alloyed layers of ZnSe. Pure CdTe interfaces are not observed and Zn atoms are also visible in the CdSe layers. This information is critical to design superlattices with the expected optoelectronic properties.

Original language	English (US)
Pages (from-to)	178-182
Number of pages	5
Journal	Journal of Microscopy
Volume	262
Issue number	2
DOIs	https://doi.org/10.1111/jmi.12340
State	Published - May 1 2016

Keywords

Atom probe tomography
High-resolution scanning transmission microscopy
II-VI semiconductors
Interfaces
Strain measurements

ASJC Scopus subject areas

Pathology and Forensic Medicine
Histology

Online availability

10.1111/jmi.12340

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title = "Interfacial chemistry in a ZnTe/CdSe superlattice studied by atom probe tomography and transmission electron microscopy strain measurements",

abstract = "The atomic scale analysis of a ZnTe/CdSe superlattice grown by molecular beam epitaxy is reported using atom probe tomography and strain measurements from high-resolution scanning transmission electron microscopy images. CdTe interfaces were grown by atomic layer epitaxy to prevent the spontaneous formation of ZnSe bonds. Both interfaces between ZnTe and CdSe are composed of alloyed layers of ZnSe. Pure CdTe interfaces are not observed and Zn atoms are also visible in the CdSe layers. This information is critical to design superlattices with the expected optoelectronic properties.",

keywords = "Atom probe tomography, High-resolution scanning transmission microscopy, II-VI semiconductors, Interfaces, Strain measurements",

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doi = "10.1111/jmi.12340",

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AU - Bonef, B.

AU - Haas, B.

AU - Rouvière, J. L.

AU - André, R.

AU - Bougerol, C.

AU - Grenier, A.

AU - Jouneau, P. H.

AU - Zuo, J. M.

PY - 2016/5/1

Y1 - 2016/5/1

N2 - The atomic scale analysis of a ZnTe/CdSe superlattice grown by molecular beam epitaxy is reported using atom probe tomography and strain measurements from high-resolution scanning transmission electron microscopy images. CdTe interfaces were grown by atomic layer epitaxy to prevent the spontaneous formation of ZnSe bonds. Both interfaces between ZnTe and CdSe are composed of alloyed layers of ZnSe. Pure CdTe interfaces are not observed and Zn atoms are also visible in the CdSe layers. This information is critical to design superlattices with the expected optoelectronic properties.

AB - The atomic scale analysis of a ZnTe/CdSe superlattice grown by molecular beam epitaxy is reported using atom probe tomography and strain measurements from high-resolution scanning transmission electron microscopy images. CdTe interfaces were grown by atomic layer epitaxy to prevent the spontaneous formation of ZnSe bonds. Both interfaces between ZnTe and CdSe are composed of alloyed layers of ZnSe. Pure CdTe interfaces are not observed and Zn atoms are also visible in the CdSe layers. This information is critical to design superlattices with the expected optoelectronic properties.

KW - Atom probe tomography

KW - High-resolution scanning transmission microscopy

KW - II-VI semiconductors

KW - Interfaces

KW - Strain measurements

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Interfacial chemistry in a ZnTe/CdSe superlattice studied by atom probe tomography and transmission electron microscopy strain measurements

Abstract

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