TY - JOUR
T1 - Interface-mediated photostimulation effects on diffusion and activation of boron implanted into silicon
AU - Kondratenko, Yevgeniy
AU - Seebauer, Edmund G.
PY - 2013
Y1 - 2013
N2 - Recent work has demonstrated the existence of nonthermal illumination effects on the diffusion of boron, arsenic, and isotopic silicon ion-implanted into silicon for ultra-shallow junction applications. In some cases, the degree of electrical activation is affected as well. The effects arise from super-bandgap light's direct action on bulk point defects via changes in their charge state. By contrast, the present work demonstrates the existence of a distinct mechanism whereby light acts indirectly on bulk defects via changes at a nearby interface. The changes occur in interfacial annihilation probability and/or electric potential, and affect the efficiency with which the interface absorbs point defects emitted by extended end-of-range defects during annealing.
AB - Recent work has demonstrated the existence of nonthermal illumination effects on the diffusion of boron, arsenic, and isotopic silicon ion-implanted into silicon for ultra-shallow junction applications. In some cases, the degree of electrical activation is affected as well. The effects arise from super-bandgap light's direct action on bulk point defects via changes in their charge state. By contrast, the present work demonstrates the existence of a distinct mechanism whereby light acts indirectly on bulk defects via changes at a nearby interface. The changes occur in interfacial annihilation probability and/or electric potential, and affect the efficiency with which the interface absorbs point defects emitted by extended end-of-range defects during annealing.
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U2 - 10.1149/2.018305jss
DO - 10.1149/2.018305jss
M3 - Article
AN - SCOPUS:84889828638
SN - 2162-8769
VL - 2
SP - P235-P242
JO - ECS Journal of Solid State Science and Technology
JF - ECS Journal of Solid State Science and Technology
IS - 5
ER -