Interface characterization of an inP/InGaAs resonant tunneling diode by scanning tunneling microscopy

W. Wu, S. L. Skala, J. R. Tucker, J. W. Lyding

Research output: Contribution to journalArticle

Abstract

A lattice-matched InP/InGaAs resonant tunneling diode is studied by scanning tunneling microscopy and spectroscopy. Results show both a structural and chemical asymmetry between the normal and inverted interfaces. The inverted (InP on InGaAs) interface is considerably rougher than the normal interface, and the frequency components of the roughness at both interfaces have been calculated. Additionally, certain images show enhanced and reduced state densities at the normal and inverted interfaces, respectively, which is most likely due to dissimilar bonding types at the interfaces. Spectroscopic observations of evanescent valence-band states tailing into the InP barrier allow for direct measurement of the valence-band offset.

Original languageEnglish (US)
Pages (from-to)602-606
Number of pages5
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume13
Issue number3
DOIs
StatePublished - May 1995

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Resonant tunneling diodes
resonant tunneling diodes
Scanning tunneling microscopy
Valence bands
scanning tunneling microscopy
Tailings
Surface roughness
Spectroscopy
valence
roughness
asymmetry
spectroscopy

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

Interface characterization of an inP/InGaAs resonant tunneling diode by scanning tunneling microscopy. / Wu, W.; Skala, S. L.; Tucker, J. R.; Lyding, J. W.

In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 13, No. 3, 05.1995, p. 602-606.

Research output: Contribution to journalArticle

@article{f0a03bb334484a9c9fbd6c382b0bd69c,
title = "Interface characterization of an inP/InGaAs resonant tunneling diode by scanning tunneling microscopy",
abstract = "A lattice-matched InP/InGaAs resonant tunneling diode is studied by scanning tunneling microscopy and spectroscopy. Results show both a structural and chemical asymmetry between the normal and inverted interfaces. The inverted (InP on InGaAs) interface is considerably rougher than the normal interface, and the frequency components of the roughness at both interfaces have been calculated. Additionally, certain images show enhanced and reduced state densities at the normal and inverted interfaces, respectively, which is most likely due to dissimilar bonding types at the interfaces. Spectroscopic observations of evanescent valence-band states tailing into the InP barrier allow for direct measurement of the valence-band offset.",
author = "W. Wu and Skala, {S. L.} and Tucker, {J. R.} and Lyding, {J. W.}",
year = "1995",
month = "5",
doi = "10.1116/1.579793",
language = "English (US)",
volume = "13",
pages = "602--606",
journal = "Journal of Vacuum Science and Technology A",
issn = "0734-2101",
publisher = "AVS Science and Technology Society",
number = "3",

}

TY - JOUR

T1 - Interface characterization of an inP/InGaAs resonant tunneling diode by scanning tunneling microscopy

AU - Wu, W.

AU - Skala, S. L.

AU - Tucker, J. R.

AU - Lyding, J. W.

PY - 1995/5

Y1 - 1995/5

N2 - A lattice-matched InP/InGaAs resonant tunneling diode is studied by scanning tunneling microscopy and spectroscopy. Results show both a structural and chemical asymmetry between the normal and inverted interfaces. The inverted (InP on InGaAs) interface is considerably rougher than the normal interface, and the frequency components of the roughness at both interfaces have been calculated. Additionally, certain images show enhanced and reduced state densities at the normal and inverted interfaces, respectively, which is most likely due to dissimilar bonding types at the interfaces. Spectroscopic observations of evanescent valence-band states tailing into the InP barrier allow for direct measurement of the valence-band offset.

AB - A lattice-matched InP/InGaAs resonant tunneling diode is studied by scanning tunneling microscopy and spectroscopy. Results show both a structural and chemical asymmetry between the normal and inverted interfaces. The inverted (InP on InGaAs) interface is considerably rougher than the normal interface, and the frequency components of the roughness at both interfaces have been calculated. Additionally, certain images show enhanced and reduced state densities at the normal and inverted interfaces, respectively, which is most likely due to dissimilar bonding types at the interfaces. Spectroscopic observations of evanescent valence-band states tailing into the InP barrier allow for direct measurement of the valence-band offset.

UR - http://www.scopus.com/inward/record.url?scp=21844494490&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=21844494490&partnerID=8YFLogxK

U2 - 10.1116/1.579793

DO - 10.1116/1.579793

M3 - Article

AN - SCOPUS:21844494490

VL - 13

SP - 602

EP - 606

JO - Journal of Vacuum Science and Technology A

JF - Journal of Vacuum Science and Technology A

SN - 0734-2101

IS - 3

ER -