Interface characterization of an inP/InGaAs resonant tunneling diode by scanning tunneling microscopy

W. Wu, S. L. Skala, J. R. Tucker, J. W. Lyding

Research output: Contribution to journalArticle


A lattice-matched InP/InGaAs resonant tunneling diode is studied by scanning tunneling microscopy and spectroscopy. Results show both a structural and chemical asymmetry between the normal and inverted interfaces. The inverted (InP on InGaAs) interface is considerably rougher than the normal interface, and the frequency components of the roughness at both interfaces have been calculated. Additionally, certain images show enhanced and reduced state densities at the normal and inverted interfaces, respectively, which is most likely due to dissimilar bonding types at the interfaces. Spectroscopic observations of evanescent valence-band states tailing into the InP barrier allow for direct measurement of the valence-band offset.

Original languageEnglish (US)
Pages (from-to)602-606
Number of pages5
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Issue number3
StatePublished - May 1995


ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this