Keyphrases
Molecular Beam Epitaxy
100%
Al-Ti
100%
TiAl
100%
GaN Layers
100%
N-GaN
100%
Ohmic Contact
100%
Interface Analysis
100%
Metal Contact
25%
Regrowth
25%
Si Dopant
25%
TiN Layer
25%
Epitaxial Layers
12%
Transmission Electron Microscopy
12%
Al Atom
12%
Metal Atoms
12%
Contact Resistance
12%
Highly Doped
12%
High-resolution Transmission Electron Microscopy (HRTEM)
12%
High-resolution Electron Energy Loss Spectroscopy (HREELS)
12%
Ohmic Resistance
12%
Tunneling Effect
12%
Metal Alloys
12%
Transmission Electron Microscopy Images
12%
Si-doped GaN
12%
N Atoms
12%
Nanobeam Electron Diffraction
12%
Ti-N
12%
Al Content
12%
N-type GaN
12%
Ti Metal
12%
Annealing Process
12%
Contact Properties
12%
Nitrogen Vacancy
12%
Aluminum Gallium Nitride (AlGaN)
12%
Engineering
Metal Contact
100%
Transmissions
100%
Dopants
100%
Ohmic Contacts
100%
High Resolution
50%
Electron Energy
50%
Tunnel Construction
50%
Energy Dissipation
50%
Alloy
50%
Epitaxial Layer
50%
Annealing Process
50%
Al Content
50%
Material Science
Molecular Beam Epitaxy
100%
Doping (Additives)
100%
Contact Resistance
100%
Annealing
50%
High-Resolution Transmission Electron Microscopy
50%
Epitaxial Layer
50%
Transmission Electron Microscopy
50%
Alloy
50%
Electron Energy Loss Spectrometry
50%